All MOSFET. IPP80N04S3-03 Datasheet

 

IPP80N04S3-03 Datasheet and Replacement


   Type Designator: IPP80N04S3-03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 1540 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
   Package: TO220
 

 IPP80N04S3-03 substitution

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IPP80N04S3-03 Datasheet (PDF)

 ..1. Size:188K  infineon
 ipb80n04s3-03 ipi80n04s3-03 ipp80n04s3-03 ipb80n04s3-03 ipi80n04s3-03 ipp80n04s3-03 ipp80n04s3 b80n04s3 i80n04s3-03.pdf pdf_icon

IPP80N04S3-03

IPB80N04S3-03IPI80N04S3-03, IPP80N04S3-03OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.2mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) Ultra low Rds(on

 2.1. Size:187K  infineon
 ipb80n04s3-04 ipi80n04s3-04 ipp80n04s3-04 ipp80n04s3 ipb80n04s3 ipi80n04s3-04.pdf pdf_icon

IPP80N04S3-03

IPB80N04S3-04IPI80N04S3-04, IPP80N04S3-04OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 3.8mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

 2.2. Size:188K  infineon
 ipb80n04s3-06 ipi80n04s3-06 ipp80n04s3-06 ipp80n04s3 ipb80n04s3 ipi80n04s3.pdf pdf_icon

IPP80N04S3-03

IPB80N04S3-06IPI80N04S3-06, IPP80N04S3-06OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 5.4mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche t

 3.1. Size:169K  infineon
 ipb80n04s3-h4 ipi80n04s3-h4 ipp80n04s3-h4.pdf pdf_icon

IPP80N04S3-03

IPB80N04S3-H4IPI80N04S3-H4, IPP80N04S3-H4OptiMOS-T Power-TransistorProduct SummaryV 40 VDSR (SMD version) 4.5mDS(on),maxI 80 ADFeatures N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green package (RoHS compliant) 100% Avalanche

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Datasheet: IPP70N10S3L-12 , IPP70N10SL-16 , IPP77N06S2-12 , IPP80N03S4L-03 , IPP80N03S4L-04 , IPP80N04S2-04 , IPP80N04S2-H4 , IPP80N04S2L-03 , IRFB4110 , IPP80N04S3-04 , IPP80N04S3-06 , IPP80N04S3-H4 , IPP80N04S4-04 , IPP80N04S4L-04 , IPP80N06S2-05 , IPP80N06S2-07 , IPP80N06S2-08 .

History: SSPL2015D | CEU16N10L | CS640A8H | IRFSL38N20DPBF | CM10N65F | RSD050N10 | KP505V

Keywords - IPP80N04S3-03 MOSFET datasheet

 IPP80N04S3-03 cross reference
 IPP80N04S3-03 equivalent finder
 IPP80N04S3-03 lookup
 IPP80N04S3-03 substitution
 IPP80N04S3-03 replacement

 

 
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