All MOSFET. 2SK3873-01 Datasheet

 

2SK3873-01 Datasheet and Replacement


   Type Designator: 2SK3873-01
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 410 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 280 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 530 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.061 Ohm
   Package: TO247
 

 2SK3873-01 substitution

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2SK3873-01 Datasheet (PDF)

 ..1. Size:112K  fuji
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2SK3873-01

2SK3873-01N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200407FUJI POWER MOSFETSuper FAP-G SeriesFeaturesHigh speed switching, Low on-resistanceLow driving power, Avalanche-proofNo secondary breakdownApplicationsSwitching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless other

 ..2. Size:283K  inchange semiconductor
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2SK3873-01

isc N-Channel MOSFET Transistor 2SK3873-01FEATURESDrain Current : I = 56A@ T =25D CDrain Source Voltage: V = 280V(Min)DSSStatic Drain-Source On-Resistance: R = 61m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 8.1. Size:227K  toshiba
2sk3878.pdf pdf_icon

2SK3873-01

2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (- MOSIV) 2SK3878 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 (typ.) High forward transfer admittance: Yfs = 7.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 720 V) Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 8.2. Size:292K  toshiba
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2SK3873-01

2SK3879 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSIV) 2SK3879 Switching Regulator Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 1.35 (typ.) High forward transfer admittance: |Yfs| = 5.2 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 640 V) Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolu

Datasheet: 2SK3982-01MR , 2SK3985-01 , 2SK3986-01MR , 2SK3870-01 , 2SK3871-01MR , 2SK3872-01L , 2SK3872-01S , 2SK3872-01SJ , IRF1407 , 2SK3874-01R , 2SK3875-01 , 2SK3514-01 , 2SK3532-01MR , 2SK3533-01 , 2SK3535-01 , 2SK3537-01MR , 2SK3692-01 .

History: UTT50P10 | SSF6014A | NTMFS4821NT1G | SML100J19 | CS150N03A8 | SISS27ADN | SWF20N65K

Keywords - 2SK3873-01 MOSFET datasheet

 2SK3873-01 cross reference
 2SK3873-01 equivalent finder
 2SK3873-01 lookup
 2SK3873-01 substitution
 2SK3873-01 replacement

 

 
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