All MOSFET. STM6920A Equivalents Search

S T M6920A S amHop Microelectronics C orp. Apr,08.2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 35 @ V G S = 10V 40V 5A S urface Mount Package. 62 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S 1 G 1 S 2 G 2 ABS OLU... See More ⇒

S T M6920 S amHop Microelectronics C orp. Aug,18 2005 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y F E AT UR E S S uper high dense cell design for low R DS (ON). V DS S ID R DS (ON) ( m W ) Max R ugged and reliable. 25 @ V G S = 10V 40V 7A S urface Mount Package. 45 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S 1 G 1 S 2 G 2 A... See More ⇒

Green Product STM6928 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 14 @ VGS=10V Suface Mount Package. 40V 9.5A 16 @ VGS=4.5V D2 5 4 G 2 6 3 D2 S 2 D1 7 2 G 1 S O-8 D1 8 1 S 1 1 (TA=25 C unless otherwi... See More ⇒

Green Product S TM6926 S amHop Microelectronics C orp. Mar.29 ,2007 Dual N-Channel E nhancement Mode Field E ffect Transistor F E ATUR E S PR ODUC T S UMMAR Y S uper high dense cell design for low R DS (ON). ID R DS (ON) ( m ) Max VDS S R ugged and reliable. 16 @ VG S = 10V S urface Mount Package. 8.5A 40V 18 @ VG S = 4.5V E S D Protected. D1 D1 D2 D2 8 7 6 5 S O-8 1 ... See More ⇒

Green Product S TM6922 S amHop Microelectronics C orp. Jan.22 ,2007 Dual N-Channel E nhancement Mode Field E ffect Transistor F E ATUR E S PR ODUC T S UMMAR Y S uper high dense cell design for low R DS (ON). ID R DS (ON) ( m ) Max VDS S R ugged and reliable. 26 @ VG S = 10V S urface Mount Package. 40V 7A 33 @ VG S = 4.5V E S D Protected. D1 D1 D2 D2 8 7 6 5 S O-8 1 1 ... See More ⇒

Green Product STM6924 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 28 @ VGS=10V Suface Mount Package. 40V 6.8A 46 @ VGS=4.5V D2 5 4 G 2 6 3 D2 S 2 D1 7 2 G 1 S O-8 D1 8 1 S 1 1 (TA=25 C unless otherwi... See More ⇒