Справочник транзисторов. RN1904AFS

 

Биполярный транзистор RN1904AFS - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: RN1904AFS
   Маркировка: C3
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 47 kOhm
   Встроенный резистор цепи смещения R2 = 47 kOhm
   Соотношение сопротивлений R1/R2 = 1
   Максимальная рассеиваемая мощность (Pc): 0.05 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.08 A
   Предельная температура PN-перехода (Tj): 150 °C
   Ёмкость коллекторного перехода (Cc): 0.7 pf
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT963 FS6

 Аналоги (замена) для RN1904AFS

 

 

RN1904AFS Datasheet (PDF)

 9.1. Size:173K  toshiba
rn1901afs rn1906afs.pdf

RN1904AFS
RN1904AFS

RN1901AFS~RN1906AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1901AFS, RN1902AFS, RN1903AFS RN1904AFS, RN1905AFS, RN1906AFS Switching, Inverter Circuit, Interface Circuit and Driver Unit: mmCircuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, Small-Mold (6-pi

 9.2. Size:133K  toshiba
rn1907fs rn1909fs.pdf

RN1904AFS
RN1904AFS

RN1907FS~RN1909FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1907FS, RN1908FS, RN1909FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1 6 Incorporating a bi

 9.3. Size:139K  toshiba
rn1907-rn1909.pdf

RN1904AFS
RN1904AFS

RN1907~RN1909 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1907,RN1908,RN1909 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary

 9.4. Size:465K  toshiba
rn1901 rn1906.pdf

RN1904AFS
RN1904AFS

RN1901~RN1906 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1901,RN1902,RN1903 RN1904,RN1905,RN1906 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a qu

 9.5. Size:133K  toshiba
rn1901fs rn1906fs.pdf

RN1904AFS
RN1904AFS

RN1901FS~RN1906FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1901FS,RN1902FS,RN1903FS RN1904FS,RN1905FS,RN1906FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine pitch small mold (6-pin) package. 1

 9.6. Size:146K  toshiba
rn1907afs rn1909afs.pdf

RN1904AFS
RN1904AFS

RN1907AFS~RN1909AFS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN1907AFS, RN1908AFS, RN1909AFS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications 1.00.050.80.05 0.10.050.10.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) 1 6package. Incorpora

 9.7. Size:196K  toshiba
rn1907fe-rn1909fe.pdf

RN1904AFS
RN1904AFS

RN1907FE~RN1909FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1907FE, RN1908FE, RN1909FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a transistor reduces parts count.

 9.8. Size:543K  toshiba
rn1901fe rn1906fe.pdf

RN1904AFS
RN1904AFS

RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1901FE, RN1902FE, RN1903FE RN1904FE, RN1905FE, RN1906FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. Incorporating a bias resistor into a t

 9.9. Size:194K  toshiba
rn1901fe-1906fe.pdf

RN1904AFS
RN1904AFS

RN1901FE~RN1906FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1901FE,RN1902FE,RN1903FE RN1904FE,RN1905FE,RN1906FE Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. Incorporating a bias resistor into a trans

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