MMBR5031 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMBR5031
   Código: 7G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 15 V
   Tensión colector-emisor (Vce): 10 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.02 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 1000 MHz
   Capacitancia de salida (Cc): 1.5 pF
   Ganancia de corriente contínua (hfe): 25
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar MMBR5031

MMBR5031 Datasheet (PDF)

..1. Size:54K motorola
mmbr5031.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR5031LT1/DThe RF LineNPN SiliconMMBR5031LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 17 dB Typ @ f = 450 MHz Low Noise NF = 2.5 dB Typ @ f

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