All MOSFET. SI4420BDY Datasheet

 

SI4420BDY Datasheet and Replacement


   Type Designator: SI4420BDY
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: SO-8
 

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SI4420BDY Datasheet (PDF)

 ..1. Size:248K  vishay
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SI4420BDY

Si4420BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0085 at VGS = 10 V 13.5 TrenchFET Power MOSFET300.0110 at VGS = 4.5 V 11 100 % Rg Tested SO-8DS1 8 DS D2 7S3 6 DG D4 5GTop ViewSOrdering Information:Si4420BDY-T1-E3 (Lea

 8.1. Size:111K  international rectifier
si4420dy.pdf pdf_icon

SI4420BDY

PD - 93835Si4420DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gate

 8.2. Size:281K  fairchild semi
si4420dy.pdf pdf_icon

SI4420BDY

January 2000Si4420DY*Single N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced using 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench processRDS(ON) = 0.013 W @ VGS = 4.5 Vthat has been especially tailored to minimize on-stateresistance and yet maintain superior switc

 8.3. Size:106K  vishay
si4420dytr.pdf pdf_icon

SI4420BDY

PD - 93835Si4420DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gate

Datasheet: SI4408DY , SI4409DY , SI4410BDY , SI4410DYPBF , SI4411DY , SI4412ADY , SI4413ADY , SI4418DY , 4N60 , SI4420DYPBF , SI4421DY , SI4423DY , SI4425BDY , SI4425DDY , SI4426DY , SI4427BDY , SI4430BDY .

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