SI4420BDY MOSFET. Datasheet pdf. Equivalent
Type Designator: SI4420BDY
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 9.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 16 nC
trⓘ - Rise Time: 11 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: SO-8
SI4420BDY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4420BDY Datasheet (PDF)
si4420bdy.pdf
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Si4420BDYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0085 at VGS = 10 V 13.5 TrenchFET Power MOSFET300.0110 at VGS = 4.5 V 11 100 % Rg Tested SO-8DS1 8 DS D2 7S3 6 DG D4 5GTop ViewSOrdering Information:Si4420BDY-T1-E3 (Lea
si4420dy.pdf
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PD - 93835Si4420DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gate
si4420dy.pdf
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January 2000Si4420DY*Single N-Channel Logic Level PowerTrench MOSFETGeneral Description FeaturesThis N-Channel Logic Level MOSFET is produced using 12.5 A, 30 V. RDS(ON) = 0.009 W @ VGS = 10 VFairchild Semiconductor's advanced PowerTrench processRDS(ON) = 0.013 W @ VGS = 4.5 Vthat has been especially tailored to minimize on-stateresistance and yet maintain superior switc
si4420dytr.pdf
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PD - 93835Si4420DYHEXFET Power MOSFET N-Channel MOSFETAA Low On-Resistance 1 8S DVDSS = 30V Low Gate Charge2 7S D Surface Mount3 6S D Logic Level Drive4 5G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-resistance and low gate
si4420dy.pdf
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Si4420DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 100% Rg Tested0.009 @ VGS = 10 V 13.530300.013 @ VGS = 4.5 V 11DSO-8SD1 8GSD2 7SD3 6GD4 5Top View SOrdering Information: Si4420DYN-Channel MOSFETSi4420DY-T1 (with Tape and Reel)ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNL
si4420dypbf si4420dytrpbf.pdf
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PD - 95729Si4420DYPbFHEXFET Power MOSFETl N-Channel MOSFETAAl Low On-Resistance1 8S DVDSS = 30Vl Low Gate Charge2 7S Dl Surface Mount3 6S Dl Logic Level Drive4 5l Lead-Free G DRDS(on) = 0.009Top ViewDescriptionThis N-channel HEXFET power MOSFET is producedusing International Rectifier's advanced HEXFET powerMOSFET technology. The low on-res
si4420dy.pdf
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SI4420DYwww.VBsemi.twN-Channel 650 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650AvailableRequirementRDS(on) ()VGS = 10 V 3.8RoHS Improved Gate, Avalanche and Dynamic dV/dtQg (Max.) (nC) 15RuggednessQgs (nC) 3 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 6 Compliant to RoHS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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