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BFS482 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BFS482
   Código: RGs
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.035 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 8000 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: SOT363
 

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BFS482 Datasheet (PDF)

 ..1. Size:53K  siemens
bfs482.pdf pdf_icon

BFS482

BFS 482NPN Silicon RF Transistor For low-noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA. fT = 8GHz F = 1.2dB at 900MHz Two (galvanic) internal isolated Transistors in one packageESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFS 482 RGs Q62702-F1573 1/4 = B

 9.1. Size:53K  siemens
bfs481.pdf pdf_icon

BFS482

BFS 481NPN Silicon RF Transistor For low-noise, high-gain broadband amplifier at collector currents from 0.5 to 12 mA fT = 8 GHz F = 1.4 dB at 900 MHz Two (galvanic) internal isolated Transistors in one packageESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFS 481 RFs Q62702-F1572 1/4 =

 9.2. Size:52K  siemens
bfs480.pdf pdf_icon

BFS482

BFS 480NPN Silicon RF Transistor For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA fT = 7GHz F = 1.5dB at 900MHz Two (galvanic) internal isolated Transistors in one packageESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Conf

 9.3. Size:53K  siemens
bfs483.pdf pdf_icon

BFS482

BFS 483NPN Silicon RF Transistor For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA fT = 8GHz F = 1.2dB at 900MHz Two (galvanic) internal isolated Transistors in one packageESD: Electrostatic discharge sensitive device, observe handling precaution!Type Marking Ordering Code Pin Configuration PackageBFS 483 RHs Q62702-F1574 1/4 = B 2/5

Otros transistores... BFS42 , BFS43 , BFS44 , BFS45 , BFS46 , BFS46A , BFS480 , BFS481 , D965 , BFS483 , BFS50 , BFS51 , BFS55 , BFS55A , BFS57 , BFS57P , BFS58 .

History: AF273 | ESM283

 

 
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