3DA10G Todos los transistores

 

3DA10G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 3DA10G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 10 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 30 MHz
   Ganancia de corriente contínua (hfe): 15
   Paquete / Cubierta: TO3
 

 Búsqueda de reemplazo de 3DA10G

   - Selección ⓘ de transistores por parámetros

 

3DA10G PDF detailed specifications

 9.1. Size:134K  china
3da100.pdf pdf_icon

3DA10G

3DA100 NPN A B C D E PCM TC=25 100 W ICM 10 A Tjm 175 Tstg -55 150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=1mA 25 50 100 150 200 V V(BR)CEO ICE=1mA 25 50 100 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 1.0 mA ICEO VCE=20V... See More ⇒

 9.2. Size:29K  shaanxi
3da101 3da102.pdf pdf_icon

3DA10G

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA101, 3DA102 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog... See More ⇒

 9.3. Size:31K  shaanxi
3da76 3da10a 3da96.pdf pdf_icon

3DA10G

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA76, 3DA10A, 3DA96 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards QZJ840611. GJB33 A-97, QZJ840611A also for 3DA9... See More ⇒

 9.4. Size:25K  shaanxi
3da10.pdf pdf_icon

3DA10G

Shaanxi Qunli Electric Co., Ltd Add. No. 1 Qunli Road,Baoji City,Shaanxi,China 3DA10 NPN Silicon High Frequency High Power Transistor Features 1. Excellent second breakdown capacity. Good characteristic frequency. 2. Amplification factor of small current is great. Good voltage resistance. 3. Implementation of standards GJB33 A-97, QZJ840611A, QZJ840611 4. Use for analog computer ... See More ⇒

Otros transistores... 3DA2 , 3DA4 , 3DA10A , 3DA10B , 3DA10C , 3DA10D , 3DA10E , 3DA10F , BC558 , 3DA100A , 3DA100B , 3DA100C , 3DA100D , 3DA100E , 3DA101 , 3DA102 , 3DA76 .

History: 3DA3942

 

 
Back to Top

 


 
.