2SA1263
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA1263
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 6
A
Temperatura operativa máxima (Tj): 125
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30
MHz
Capacitancia de salida (Cc): 290
pF
Ganancia de corriente contínua (hfe): 55
Paquete / Cubierta:
TO218
Búsqueda de reemplazo de transistor bipolar 2SA1263
2SA1263
Datasheet (PDF)
..1. Size:94K toshiba
2sa1263.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
..2. Size:221K inchange semiconductor
2sa1263.pdf
isc Silicon PNP Power Transistor 2SA1263DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC3180Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage app
0.1. Size:198K jmnic
2sa1263n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1263N DESCRIPTION With TO-3P(I) package Complement to type 2SC3180N 2SA1263 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) S
0.2. Size:222K inchange semiconductor
2sa1263n.pdf
isc Silicon PNP Power Transistor 2SA1263NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -5ACE(sat) CGood Linearity of hFEComplement to Type 2SC3180NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 40W high fidelity audio frequencyamplifier output stage a
8.1. Size:94K toshiba
2sa1265.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.2. Size:95K toshiba
2sa1264.pdf
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.4. Size:160K jmnic
2sa1261.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1261 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SC3157 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION1 Emitter 2 CollectorFig.1 simplified outline (TO-220) and symbol3 BaseAbsolu
8.5. Size:183K jmnic
2sa1262.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1262 DESCRIPTION With TO-220 package Complement to type 2SC3179 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbolAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT
8.6. Size:201K jmnic
2sa1265n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) SY
8.7. Size:198K jmnic
2sa1264n.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1264N DESCRIPTION With TO-3P(I) package Complement to type 2SC3181N 2SA1264 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 BaseAbsolute maximum ratings(Ta=25) S
8.9. Size:23K sanken-ele
2sa1262.pdf
2SA1262Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179)Application : Audio and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)Unit SymbolSymbol 2SA1262 Conditions 2SA1262 Unit0.24.80.210.2VCBO V ICBO VCB=60V 100max A60 2.00.1VCEO V IEBO VEB=6V 100max
8.10. Size:195K cn sptech
2sa1264r 2sa1264o.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1264DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC3181APPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
8.11. Size:195K cn sptech
2sa1261m 2sa1261l 2sa1261k.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1261DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3157APPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switching reg-lators, DC/DC converters, and high frequency p
8.12. Size:195K cn sptech
2sa1265r 2sa1265o.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1265DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
8.13. Size:219K inchange semiconductor
2sa1261.pdf
isc Silicon PNP Power Transistor 2SA1261DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3157Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDeveloped for high-voltage high-speed switching, and isideal for use as a driver in devices such as switchin
8.14. Size:214K inchange semiconductor
2sa1262.pdf
isc Silicon PNP Power Transistor 2SA1262DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min.)(BR)CEOLow Collector Saturation Voltage: V = -0.6V(Max.)@I = -2ACE(sat) CComplement to Type 2SC3179Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIM
8.15. Size:186K inchange semiconductor
2sa1261-z.pdf
isc Silicon PNP Power Transistor 2SA1261-ZDESCRIPTIONHigh switching speedLow Collector-Emitter Saturation Voltage-: VCE(sat)= -0.6V(Max)@ IC= -5A100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SC3157APPLICATIONSHigh speed high voltage switching industrial useDC/DC convertersABSOLUTE MAX
8.16. Size:220K inchange semiconductor
2sa1265.pdf
isc Silicon PNP Power Transistor 2SA1265DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage app
8.17. Size:220K inchange semiconductor
2sa1264.pdf
isc Silicon PNP Power Transistor 2SA1264DESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC3181Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage app
8.18. Size:222K inchange semiconductor
2sa1265n.pdf
isc Silicon PNP Power Transistor 2SA1265NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -7ACE(sat) CGood Linearity of hFEComplement to Type 2SC3182NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage a
8.19. Size:222K inchange semiconductor
2sa1264n.pdf
isc Silicon PNP Power Transistor 2SA1264NDESCRIPTIONLow Collector Saturation Voltage-: V = -2.0V(Min) @I = -6ACE(sat) CGood Linearity of hFEComplement to Type 2SC3181NMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 55W high fidelity audio frequencyamplifier output stage a
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
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, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.