L2N7002M3T5G
MOSFET. Datasheet pdf. Equivalent
Type Designator: L2N7002M3T5G
Marking Code: 72
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 0.115
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 10
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4
Ohm
Package:
SOT723
L2N7002M3T5G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
L2N7002M3T5G
Datasheet (PDF)
..1. Size:167K lrc
l2n7002m3t5g s-l2n7002m3t5g.pdf 
LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002M3T5G115 mAmps, 60 VoltsS-L2N7002M3T5GNChannel SOT7233 Pb-Free Package is Available. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.21ORDERING INFORMATIONSOT-723Device Marking ShippingL2N7002M3T5G72 8000 Tap
7.1. Size:570K lrc
l2n7002dw1t1g s-l2n7002dw1t1g.pdf
L2N7002DW1T1GS-L2N7002DW1T1GSmall Signal MOSFET115 mAmps, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected:1000V2. DE
7.2. Size:778K lrc
l2n7002klt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFET L2N7002KLT1G380 mAmps, 60 Volts NChannel SOT23 S-L2N7002KLT1GFEATURES31)ESD Protected2)Low RDS(on)13)Surface Mount Package24)This is a Pb-Free Device5)We declare that the material of product compliant withSOT23RoHS requirements and Halogen Free.6) S- Prefix for Automotive and Other Applications RequiringUn
7.3. Size:446K lrc
l2n7002dmt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mAmps, 60 VoltsL2N7002DMT1GNChannel SC74 We declare that the material of product compliance with RoHS requirements.MAXIMUM RATINGSRating Symbol Value UnitSC-74DrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc115 mAMPSDrain Current ID 115 mAdc Continuous TC = 25C (Note 1
7.5. Size:524K lrc
l2n7002lt1g s-l2n7002lt1g.pdf
L2N7002LT1GS-L2N7002LT1GSmall Signal MOSFET115 mAmps, 60 Volts NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD Protected:1000V2.
7.6. Size:907K lrc
l2n7002sdw1t1g l2n7002sdw1t3g.pdf
L2N7002SDW1T1GS-L2N7002SDW1T1GSmall Signal MOSFET380 mA, 60V NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD protectedLow RDS
7.7. Size:340K lrc
l2n7002lt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002LT1G115 mAmps, 60 VoltsNChannel SOT233 We declare that the material of product 1compliance with RoHS requirements.2 ESD Protected:1000VCASE 318, STYLE 21SOT 23 (TO236AB)MAXIMUM RATINGSRating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vd
7.8. Size:597K lrc
l2n7002kdw1t1g l2n7002kdw1t3g.pdf
L2N7002KDW1T1GS-L2N7002KDW1T1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-881. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC88(SOT-363) qualified and PPAP capable.ESD Protected2. D
7.9. Size:149K lrc
l2n7002wt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mA, 60 VL2N7002WT1GNChannel SOT3233 We declare that the material of product compliance with RoHS requirements.1 ESD Protected:1000V2MAXIMUM RATINGSSOT 323 (SC-70)Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 VdcDrain Current ID 115 mAdcSim
7.10. Size:393K lrc
l2n7002swt1g s-l2n7002swt1g.pdf
L2N7002SWT1GS-L2N7002SWT1GSmall Signal MOSFET380 mAmps, 60 Volts NChannel SC-701. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SC70(SOT-323) qualified and PPAP capable.ESD protectedLow R
7.11. Size:965K lrc
l2n7002slt1g l2n7002slt3g.pdf
L2N7002SLT1GS-L2N7002SLT1GSmall Signal MOSFET380 mAmps, 60V NChannel SOT-231. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101SOT23(TO-236) qualified and PPAP capable.ESD protectedLow RDS
7.12. Size:296K lrc
l2n7002dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFET115 mAmps,60 VoltsL2N7002DW1T1GNChannel SC-88 Pb-Free Package is Available. ESD Protected:1000VMAXIMUM RATINGSRating Symbol Value Unit3 2 1Drain-Source Voltage VDSS 60 VdcD2 G1 S1Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 VdcDrain Current ID 115 mAdcID 75- Continuous TC = 25C (Note 1)IDM 800- Continuo
7.13. Size:407K lrc
l2n7002flt1g.pdf
LESHAN RADIO COMPANY, LTD.Small Signal MOSFETL2N7002FLT1G30 VoltsNChannel SOT233 We declare that the material of product are Halogen Free andcompliance with RoHS requirements. 12FEATURES CASE 318, STYLE 21SOT 23 (TO236AB) RDS(ON) 8@VGS=4V RDS(ON) 13@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exce
Datasheet: AM3401
, AM3402N
, AM3403P
, AM3405P
, AM3406
, AM3406N
, AM3407
, AM3407PE
, SKD502T
, AM3412N
, AM3413
, AM3413P
, AM3415
, AM3415A
, AM3416
, AM3422
, AM3423P
.
