2SC4916 Datasheet and Replacement

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4916DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper Diode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal output applications for medium resolutiondisplay &

2SC4915 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4915 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, If Amplifier Applications Small reverse transfer capacitance: Cre = 0.55 pF (typ.) Low noise figure: NF = 2.3dB (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 40 VCollector-emit

Ordering number:EN4411NPN Epitaxial Planar Silicon Transistor2SC4910VHF-Band Power Amplifier ApplicationsFeatures Package Dimensions On-chip emitter ballast resistors.unit:mm2084B[2SC4910]4.51.9 2.610.51.2 1.41.20.51.60.51 2 31 : Emitter2 : Collector3 : Base2.5 2.5 SANYO : FLPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol

Ordering number:EN4765NPN Epitaxial Planar Silicon Transistor2SC4919Muting Circuit ApplicationsFeatures Package Dimensions Very small-sized package permitting 2SC4919-unit:mmapplied sets to be made smaller and slimmer.2106A Small output capacitance.[2SC4909] Low collector-to-emitter saturation voltage. 0.750.30.6 Small ON resistance.0 to 0.10.20.1

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM