All Transistors. NJW0302 Datasheet

 

NJW0302 Datasheet, Equivalent, Cross Reference Search


   Type Designator: NJW0302
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Emitter Voltage |Vce|: 250 V
   Maximum Collector Current |Ic max|: 15 A
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 75
   Noise Figure, dB: -
   Package: TO3P

 NJW0302 Transistor Equivalent Substitute - Cross-Reference Search

   

NJW0302 Datasheet (PDF)

 0.1. Size:80K  onsemi
njw0281g njw0302g.pdf

NJW0302 NJW0302

NJW0281G (NPN)NJW0302G (PNP)Preferred DevicesComplementary NPN-PNPPower Bipolar TransistorsThese complementary devices are lower power versions of thepopular NJW3281G and NJW1302G audio output transistors. Withhttp://onsemi.comsuperior gain linearity and safe operating area performance, thesetransistors are ideal for high fidelity audio amplifier output stages and15 AMPERES

 0.2. Size:949K  cn evvo
njw0302g.pdf

NJW0302 NJW0302

NJW0302GSilicon PNP transistorPower Amplifier ApplicationsComplementary to NJW0281GHigh collector voltage:VCEO=-230V(min)Recommended for 100-W high-fidelity audio frequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant changein temperature, etc.) may cause this product to de

 0.3. Size:1891K  cn sps
njw0302gt4tl.pdf

NJW0302 NJW0302

NJW0302GT4TLDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V =250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0281GAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -250 VCBOV Collector-Emitter Voltage -250 VCEOColl

 0.4. Size:155K  cn minos
njw0302g.pdf

NJW0302 NJW0302

NJW0302GTransistor Silicon PNP Epitaxial TypeNJW0302GPower Amplifier ApplicationsComplementaryto NJW0281GHigh collector voltage:VCEO=-230V (min)Recommendedfor 100-Whigh-fidelity audiofrequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant changeintemperature, etc.) may causethis produc

 0.5. Size:240K  inchange semiconductor
njw0302g.pdf

NJW0302 NJW0302

isc Silicon PNP Power Transistor NJW0302GDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -250V(Min)(BR)CEOGood Linearity of hFEComplement to Type NJW0281GMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high fidelity audio amplifier andother linear applicationsABSOLUTE MAXIMUM RATINGS(Ta=25

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BEL100N

 

 
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