MMBTSA733P PDF and Equivalents Search

 

MMBTSA733P PDF Specs and Replacement


   Type Designator: MMBTSA733P
   Material of Transistor: Si
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 180(typ) MHz
   Collector Capacitance (Cc): 2.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO236
 

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MMBTSA733P PDF detailed specifications

 ..1. Size:149K  semtech
mmbtsa733r mmbtsa733o mmbtsa733y mmbtsa733p mmbtsa733l.pdf pdf_icon

MMBTSA733P

MMBTSA733 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the NPN transistor MMBTSC945 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO ... See More ⇒

 8.1. Size:187K  semtech
mmbtsa1504o mmbtsa1504y mmbtsa1504g.pdf pdf_icon

MMBTSA733P

MMBTSA1504 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and G, according to its DC current gain. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO ... See More ⇒

 8.2. Size:345K  semtech
mmbtsa812o mmbtsa812y mmbtsa812g mmbtsa812l.pdf pdf_icon

MMBTSA733P

MMBTSA812 PNP Silicon Epitaxial Planar Transistor for audio frequency, general purpose amplifier. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 5... See More ⇒

 8.3. Size:739K  cn cbi
mmbtsa1576w.pdf pdf_icon

MMBTSA733P

PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups Q, R and S according to its DC current gain. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 150 mA Power Dissipation Ptot 200 mW O Junction Temperatur... See More ⇒

Detailed specifications: MMBTRC107SS , MMBTRC108SS , MMBTRC109SS , MMBTSA1504G , MMBTSA1504O , MMBTSA1504Y , MMBTSA733L , MMBTSA733O , S9014 , MMBTSA733R , MMBTSA733Y , MMBTSA812G , MMBTSA812L , MMBTSA812O , MMBTSA812Y , MMBTSC1623G , MMBTSC1623L .

Keywords - MMBTSA733P pdf specs

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