CS40N20F MOSFET. Datasheet pdf. Equivalent
Type Designator: CS40N20F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 63.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 40 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 154 nC
trⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 355 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO-220F
CS40N20F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CS40N20F Datasheet (PDF)
cs40n20f a9h.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
cs40n20f a9e.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS40N20F A9E General Description VDSS 200 V CS40N20F A9E the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.047 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vari
cs40n20f cs40n20p.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
nvertCS40N20F,CS40N20PSuzhou Convert Semiconductor Co ., Ltd.200V N-Channel MOSFETFEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body DiodeAPPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controlsDevice Marking and Package InformationDevice Package
cs40n20 a8.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs40n20 anh.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario
cs40n20a8.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .