All MOSFET. CS40N20F Datasheet

 

CS40N20F Datasheet and Replacement


   Type Designator: CS40N20F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 355 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-220F
 

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CS40N20F Datasheet (PDF)

 ..1. Size:222K  crhj
cs40n20f a9h.pdf pdf_icon

CS40N20F

Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 ..2. Size:216K  crhj
cs40n20f a9e.pdf pdf_icon

CS40N20F

Silicon N-Channel Power MOSFET R CS40N20F A9E General Description VDSS 200 V CS40N20F A9E the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.047 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vari

 ..3. Size:800K  convert
cs40n20f cs40n20p.pdf pdf_icon

CS40N20F

nvertCS40N20F,CS40N20PSuzhou Convert Semiconductor Co ., Ltd.200V N-Channel MOSFETFEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body DiodeAPPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controlsDevice Marking and Package InformationDevice Package

 7.1. Size:216K  crhj
cs40n20 a8.pdf pdf_icon

CS40N20F

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Datasheet: CS3N80BF , CS3N80BP , CS3N80BU , CS3N80BL , CS3N80BK , CS3N90F , CS3N90P , CS3N90B , IRF3205 , CS40N20P , CS4N100F , CS4N100V , CS4N100VF , CS4N150V , CS4N150W , CS4N150VF , CS4N60P .

History: 2SK296 | 2SK2857C | DMN3025LSS

Keywords - CS40N20F MOSFET datasheet

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