IPI80N08S4-06 PDF and Equivalents Search

 

IPI80N08S4-06 Specs and Replacement


   Type Designator: IPI80N08S4-06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO262
 

 IPI80N08S4-06 substitution

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IPI80N08S4-06 datasheet

 ..1. Size:228K  infineon
ipb80n08s4-06 ipi80n08s4-06 ipp80n08s4-06.pdf pdf_icon

IPI80N08S4-06

IPB80N08S4-06 IPI80N08S4-06, IPP80N08S4-06 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 5.5 mW DS(on),max I 80 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Typ... See More ⇒

 5.1. Size:164K  1
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf pdf_icon

IPI80N08S4-06

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

 5.2. Size:160K  infineon
ipb80n08s2-07 ipp80n08s2-07 ipi80n08s2-07.pdf pdf_icon

IPI80N08S4-06

IPB80N08S2-07 IPP80N08S2-07, IPI80N08S2-07 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R (SMD version) 7.1 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra low Rds(on) ... See More ⇒

 7.1. Size:158K  infineon
ipp80n06s2l-05 ipb80n06s2l-05 ipi80n06s2l-05.pdf pdf_icon

IPI80N08S4-06

IPB80N06S2L-05 IPI80N06S2L-05, IPP80N06S2L-05 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 4.5 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Green package (lead free) Ultra l... See More ⇒

Detailed specifications: IPI120N08S4-04 , IPI120N10S4-03 , IPI120N10S4-05 , IPI120P04P4-04 , IPI120P04P4L-03 , IPI16CN10NG , IPI50N12S3L-15 , IPI70N12S3-11 , IRF9540 , IPI80P03P4-05 , IPI80P04P4-07 , IPI80P04P4L-04 , IPI80P04P4L-08 , IPL60R060CFD7 , IPL60R065C7 , IPL60R075CFD7 , IPL60R085P7 .

Keywords - IPI80N08S4-06 MOSFET specs

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