APT44GA60SD30C PDF and Equivalents Search

 

APT44GA60SD30C Specs and Replacement

Type Designator: APT44GA60SD30C

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 337 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 78 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V

tr ⓘ - Rise Time, typ: 14 nS

Coesⓘ - Output Capacitance, typ: 358 pF

Qg ⓘ - Total Gate Charge, typ: 128 nC

Package: TO268AB

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APT44GA60SD30C datasheet

 ..1. Size:226K  microsemi
 apt44ga60sd30c.pdf pdf_icon

APT44GA60SD30C

APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT APT44GA60SD30C POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAK achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech- nologies. Low gate charge and a greatly reduced ratio of ... See More ⇒

 1.1. Size:237K  microsemi
 apt44ga60bd30 apt44ga60sd30.pdf pdf_icon

APT44GA60SD30C

APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT APT44GA60SD30 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres... See More ⇒

 4.1. Size:219K  microsemi
 apt44ga60s.pdf pdf_icon

APT44GA60SD30C

APT44GA60B APT44GA60S 600V High Speed PT IGBT APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr... See More ⇒

 5.1. Size:219K  microsemi
 apt44ga60b.pdf pdf_icon

APT44GA60SD30C

APT44GA60B APT44GA60S 600V High Speed PT IGBT APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr... See More ⇒

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Specs: APT30GN60BDQ2G , APT30GP60BDQ1G , APT30GT60KRG , APT35GN120SG , APT35GP120B2DQ2G , APT40GR120B , APT40GR120S , APT44GA60BD30C , GT30G124 , APT50GF120B2RG , APT50GF120JRDQ3 , APT50GF120LRG , APT50GP60B2DQ2G , APT50GP60LDLG , APT50GT120B2RDLG , APT50GT120LRDQ2G , APT65GP60B2G .

Keywords - APT44GA60SD30C transistor spec

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