All MOSFET. SFI9610 Datasheet

 

SFI9610 Datasheet and Replacement


   Type Designator: SFI9610
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 1.75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO262
      - MOSFET Cross-Reference Search

 

SFI9610 Datasheet (PDF)

 ..1. Size:254K  fairchild semi
 sfi9610 sfw9610.pdf pdf_icon

SFI9610

SFW/I9610Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.75 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 2.084 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maxi

 8.1. Size:216K  samsung
 sfi9614.pdf pdf_icon

SFI9610

SFW/I9614Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 4.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = -1.6 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 3.5 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum

 9.1. Size:259K  fairchild semi
 sfi9624 sfw9624.pdf pdf_icon

SFI9610

SFW/I9624Advanced Power MOSFETFEATURESBVDSS = -250 V Avalanche Rugged TechnologyRDS(on) = 2.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = -2.7 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -250V2 Low RDS(ON) : 1.65 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum

 9.2. Size:256K  fairchild semi
 sfi9630 sfw9630.pdf pdf_icon

SFI9610

SFW/I9630Advanced Power MOSFETFEATURESBVDSS = -200 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = -6.5 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK Lower Leakage Current : 10 A (Max.) @ VDS = -200V2 Low RDS(ON) : 0.581 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximu

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Datasheet: SFH9140 , SFH9154 , SFH9240 , SFH9244 , SFI2955 , SFI9510 , SFI9520 , SFI9530 , IRF530 , SFI9614 , SFI9620 , SFI9624 , SFI9630 , SFI9634 , SFI9640 , SFI9644 , SFI9Z14 .

History: SM6A12NSFP | DM12N65C | SPD04N60S5 | AP6679GI-HF | NTD4855N-1G | FCPF7N60YDTU

Keywords - SFI9610 MOSFET datasheet

 SFI9610 cross reference
 SFI9610 equivalent finder
 SFI9610 lookup
 SFI9610 substitution
 SFI9610 replacement

 

 
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