LSGC04R025 Datasheet and Replacement
Type Designator: LSGC04R025
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 57.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 2130 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: TO-220
LSGC04R025 substitution
LSGC04R025 Datasheet (PDF)
lsgn04r025 lsgc04r025.pdf

LSGN04R025/LSGC04R025Lonten N-channel 40V, 120A, 2.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching performance, and
lsgc04r029 lsgg04r029 lsgh04r029 lsgn04r029.pdf

LSGC04R029/LSGG04R029/LSGH04R029/LSGN04R029Lonten N-channel 40V, 120A, 2.9m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 2.9mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior swit
lsgc04r035 lsgd04r035 lsge04r035 lsgg04r035 lsgh04r035 lsgn04r035.pdf

LSGC04R035/LSGD04R035/LSGE04R035/LSGG04R035/LSGH04R035/LSGN04R035Lonten N-channel 40V, 120A, 3.5m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 40VDSSeffect transistors are using split gate trench DMOS R GSDS(on),max@ V =10V 3.5mtechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance
lsgn03r020 lsgg03r020 lsgc03r020.pdf

LSGN03R020/LSGG03R020/LSGC03R020Lonten N-channel 30V, 120A, 2.0m Power MOSFETDescription Product SummaryThese N-Channel enhancement mode power field V 30VDSSeffect transistors are using split gate trench DMOS RDS(on),max@ V =10V 2.0mGStechnology. This advanced technology has been I 120ADespecially tailored to minimize on-state resistance,provide superior switching perf
Datasheet: LSG70R1KGT , LSG70R380GT , LSG70R450GT , LSG70R640GT , LSG80R2K8GT , LSG80R680GT , LSG80R980GT , LSGC03R020 , IRF520 , LSGC04R029 , LSGC04R035 , LSGC06R034W3 , LSGC085R041W3 , LSGC085R065W3 , LSGC10R080W3 , LSGC15R085W3 , LSGD04R035 .
History: BSO203SPH | APT4014BVFRG | IRF7946
Keywords - LSGC04R025 MOSFET datasheet
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LSGC04R025 equivalent finder
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LSGC04R025 substitution
LSGC04R025 replacement
History: BSO203SPH | APT4014BVFRG | IRF7946



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