VBMB2102M Specs and Replacement
Type Designator: VBMB2102M
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 65 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.220 typ Ohm
Package: TO220FP
VBMB2102M substitution
- MOSFET ⓘ Cross-Reference Search
VBMB2102M datasheet
vbmb2102m.pdf
VBMB2102M www.VBsemi.com P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.220 at VGS = - 10 V - 12 TrenchFET Power MOSFET - 100 11.7 0.230 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Switch D... See More ⇒
vbmb2658.pdf
VBMB2658 www.VBsemi.com P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.050 at VGS = - 10 V - 30 - 60 67 100 % Rg and UIS Tested 0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/EC TO-220 FULLPAK S G S D D G P-Channel... See More ⇒
vbmb2610n.pdf
VBMB2610N www.VBsemi.com P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) ( ) TrenchFET Power MOSFET ID (A) Qg (Typ) 100 % UIS Tested 0.063 at VGS = - 10 V - 25 - 60 25 0.075 at VGS = - 4.5 V APPLICATIONS - 20 Load Switch S TO-220 FULLPAK G D S D G P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Paramete... See More ⇒
Detailed specifications: VBMB1638, VBMB165R02, VBMB165R04, VBMB165R18, VBMB165R20, VBMB16R08, VBMB17R07, VBMB185R05, AO3400A, VBMB2610N, VBMB2658, VBNC1303, VBL1303, VBP1104N, VBP15R50S, VBP1606, VBQA1102N
Keywords - VBMB2102M MOSFET specs
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VBMB2102M replacement
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