VBMB2102M Datasheet and Replacement
Type Designator: VBMB2102M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 38.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 65 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.220(typ) Ohm
Package: TO220FP
VBMB2102M substitution
VBMB2102M Datasheet (PDF)
vbmb2102m.pdf

VBMB2102Mwww.VBsemi.comP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.220 at VGS = - 10 V - 12 TrenchFET Power MOSFET- 100 11.70.230 at VGS = - 4.5 V - 10 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Switch D
vbmb2658.pdf

VBMB2658www.VBsemi.comP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.050 at VGS = - 10 V- 30- 60 67 100 % Rg and UIS Tested0.060 at VGS = - 4.5 V - 24 Compliant to RoHS Directive 2002/95/ECTO-220 FULLPAK SGS DDGP-Channel
vbmb2610n.pdf

VBMB2610Nwww.VBsemi.comP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY VDS (V) RDS(on) () TrenchFET Power MOSFETID (A) Qg (Typ) 100 % UIS Tested0.063 at VGS = - 10 V - 25- 60 250.075 at VGS = - 4.5 V APPLICATIONS- 20 Load SwitchSTO-220 FULLPAKGDSDGP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParamete
Datasheet: VBMB1638 , VBMB165R02 , VBMB165R04 , VBMB165R18 , VBMB165R20 , VBMB16R08 , VBMB17R07 , VBMB185R05 , RU6888R , VBMB2610N , VBMB2658 , VBNC1303 , VBL1303 , VBP1104N , VBP15R50S , VBP1606 , VBQA1102N .
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