NCEP026N10F datasheet, аналоги, основные параметры

Наименование производителя: NCEP026N10F

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 42 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 27 ns

Cossⓘ - Выходная емкость: 1100 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0033 Ohm

Тип корпуса: TO-220F

Аналог (замена) для NCEP026N10F

- подборⓘ MOSFET транзистора по параметрам

 

NCEP026N10F даташит

 ..1. Size:325K  ncepower
 ncep026n10f.pdf pdf_icon

NCEP026N10F

NCEP026N10F NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.9m , typical @ VGS=10V losses are minimized due to an extremely low combinat

 4.1. Size:352K  ncepower
 ncep026n10m.pdf pdf_icon

NCEP026N10F

NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =200A switching performance. Both conduction and switching power RDS(ON)=2.4m , typical (TO-220)@ VGS=10V losses are minimized due to an

 4.2. Size:683K  ncepower
 ncep026n10d.pdf pdf_icon

NCEP026N10F

NCEP026N10, NCEP026N10D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =100V,I =200A DS D switching performance. Both conduction and switching power R =2.4m , typical (TO-220)@ V =10V DS(ON) GS losses are minimized due to an ext

 4.3. Size:302K  ncepower
 ncep026n10ll.pdf pdf_icon

NCEP026N10F

NCEP026N10LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency VDS =100V,ID =280A switching performance. Both conduction and switching power RDS(ON)=2.0m , typical@ VGS=10V losses are minimized due to an extremely low combinat

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCEP025N60AG, NCEP025N60D, NCEP025N60G, NCEP025N85LL, NCEP0260, NCEP0260D, NCEP026N10, NCEP026N10D, 2N7000, NCEP026N10LL, NCEP026N10M, NCEP026N10T, NCEP026N85, NCEP026N85D, NCEP028N12LL, NCEP028N60AGU, NCEP029N10