2SD763 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SD763
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 150
Package: TO92
2SD763 Transistor Equivalent Substitute - Cross-Reference Search
2SD763 Datasheet (PDF)
9.1. 2sd768.pdf 
Size:36K _hitachi
2SD768(K)Silicon NPN EpitaxialApplicationMedium speed and power switching complementary pair with 2SB727(K)OutlineTO-220AB211. Base2. Collector(Flange)13. Emitter 3 k 200 23(Typ) (Typ)3Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 120 VCollector to emitter voltage VCEO 120 VEmitter to base voltage VEBO
9.2. 2sd762.pdf Size:39K _no
9.3. 2sd761.pdf Size:22K _no
9.4. 2sd762 2sd762a.pdf Size:90K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD762 2SD762A DESCRIPTION With TO-220C package Wide area of safe operation APPLICATIONS For audio freuqency power amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VAL
9.5. 2sd764.pdf Size:179K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD764DESCRIPTIONWith TO-3 PackageHigh Voltage CapabilityLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high voltage power switching TV horizontaldeflection output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY
9.6. 2sd762.pdf Size:212K _inchange_semiconductor
isc Silicon NPN Power Transistor 2SD762DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min.)CEO(SUS)Collector-Emitter Saturation Voltage-: V = 1.0V(Max.) @I = 2.0ACE(sat) CWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for AF power amplifier applications.ABSOLUTE MAXIM
9.7. 2sd768.pdf Size:206K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SD768DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.5V(Max)@ I = 3ACE(sat) CComplement to Type 2SB727Minimum Lot-to-Lot variations for robust deviceperformance and reliable
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
