RJP60F5DPK IGBT. Datasheet pdf. Equivalent

   Type Designator: RJP60F5DPK
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 260.4 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.37 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 77 nS
   Coesⓘ - Output Capacitance, typ: 100 pF
   Qgⓘ - Total Gate Charge, typ: 74 nC
   Package: TO3P

RJP60F5DPK Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJP60F5DPK Datasheet (PDF)

..1. Size:77K renesas
rjp60f5dpk.pdf

Preliminary Datasheet RJP60F5DPK R07DS0757EJ0100600V - 40A - IGBT Rev.1.00High Speed Power Switching May 31, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25C, inductive load) Outline RENESAS Pack

5.1. Size:81K renesas
r07ds0587ej rjp60f5dpm.pdf

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100600 V - 40 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

5.2. Size:75K renesas
rjp60f5dpm.pdf

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0200600V - 40A - IGBT Rev.2.00High Speed Power Switching May 31, 2012Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25

8.1. Size:79K renesas
rjp60f0dpe.pdf

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Sep 09, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta =

8.2. Size:80K renesas
r07ds0585ej rjp60f0dpm.pdf

Preliminary Datasheet RJP60F0DPM R07DS0585EJ0100600 V - 25 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15 V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

8.3. Size:76K renesas
rjp60f4dpm.pdf

Preliminary Datasheet RJP60F4DPM R07DS0586EJ0100600 V - 30 A - IGBT Rev.1.00High Speed Power Switching Nov 25, 2011Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 30 A, VGE = 15V, Ta = 25C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)C

8.4. Size:81K renesas
r07ds0540ej rjp60f0dpe.pdf