RJP60F5DPK Spec and Replacement, IGBT Equivalent Finder, Cross Reference

RJP60F5DPK Specs and Replacement

Type Designator: RJP60F5DPK

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 260.4 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.37 V @25℃

tr ⓘ - Rise Time, typ: 77 nS

Coesⓘ - Output Capacitance, typ: 100 pF

Package: TO3P

RJP60F5DPK Substitution

- IGBT ⓘ Cross-Reference Search

RJP60F5DPK datasheet

..1. Size:77K renesas
rjp60f5dpk.pdf pdf_icon

Preliminary Datasheet RJP60F5DPK R07DS0757EJ0100 600V - 40A - IGBT Rev.1.00 High Speed Power Switching May 31, 2012 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) High speed switching tf = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25 C, inductive load) Outline RENESAS Pack... See More ⇒

5.1. Size:81K renesas
r07ds0587ej rjp60f5dpm.pdf pdf_icon

Preliminary Datasheet RJP60F5DPM R07DS0587EJ0100 600 V - 40 A - IGBT Rev.1.00 High Speed Power Switching Nov 25, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25 C) Trench gate and thin wafer technology High speed switching Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) C ... See More ⇒

5.2. Size:75K renesas
rjp60f5dpm.pdf pdf_icon

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8.1. Size:79K renesas
rjp60f0dpe.pdf pdf_icon

Preliminary Datasheet RJP60F0DPE R07DS0540EJ0100 600 V - 25 A - IGBT Rev.1.00 High Speed Power Switching Sep 09, 2011 Features Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (at IC = 25 A, VGE = 15V, Ta = 25 C) Trench gate and thin wafer technology High speed switching tf = 90 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = ... See More ⇒