IPN60R3K4CE PDF and Equivalents Search

 

IPN60R3K4CE Specs and Replacement


   Type Designator: IPN60R3K4CE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 9 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.4 Ohm
   Package: SOT223
 

 IPN60R3K4CE substitution

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IPN60R3K4CE datasheet

 ..1. Size:1042K  infineon
ipn60r3k4ce.pdf pdf_icon

IPN60R3K4CE

IPN60R3K4CE MOSFET PG-SOT223 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high... See More ⇒

 7.1. Size:1230K  infineon
ipn60r360p7s.pdf pdf_icon

IPN60R3K4CE

IPN60R360P7S MOSFET PG-SOT223 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF... See More ⇒

 7.2. Size:723K  infineon
ipn60r360pfd7s.pdf pdf_icon

IPN60R3K4CE

IPN60R360PFD7S MOSFET PG-SOT223 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d... See More ⇒

 8.1. Size:713K  infineon
ipn60r2k0pfd7s.pdf pdf_icon

IPN60R3K4CE

IPN60R2K0PFD7S MOSFET PG-SOT223 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d... See More ⇒

Detailed specifications: IPN50R3K0CE , IPN50R650CE , IPN50R800CE , IPN60R1K0PFD7S , IPN60R1K5CE , IPN60R2K0PFD7S , IPN60R360P7S , IPN60R360PFD7S , IRFP450 , IPN60R600P7S , IPN60R600PFD7S , IPN65R1K5CE , IPN70R1K0CE , IPN70R1K2P7S , IPN70R1K4P7S , IPN70R1K5CE , IPN70R2K0P7S .

Keywords - IPN60R3K4CE MOSFET specs

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 IPN60R3K4CE replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 


 
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