19N10L-TMS2-T
MOSFET. Datasheet pdf. Equivalent
Type Designator: 19N10L-TMS2-T
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 50
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 15.6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 70
nS
Cossⓘ -
Output Capacitance: 165
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
TO-251S
19N10L-TMS2-T
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
19N10L-TMS2-T
Datasheet (PDF)
8.1. Size:611K fairchild semi
fqb19n10ltm.pdf 
August 2000TMQFETQFETQFETQFETFQB19N10L / FQI19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced tec
8.2. Size:626K fairchild semi
fqp19n10l.pdf
August 2000TMQFETQFETQFETQFETFQP19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 19A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has
8.3. Size:688K fairchild semi
fqd19n10ltf fqd19n10ltm fqd19n10l fqu19n10l.pdf
January 2009QFETFQD19N10L / FQU19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 15.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been
8.4. Size:616K fairchild semi
fqpf19n10l.pdf
August 2000TMQFETQFETQFETQFETFQPF19N10L100V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 13.6A, 100V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology h
8.5. Size:501K way-on
wmq119n10lg2.pdf
WMQ119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionDDDDDDD DWMQ119N10LG2 uses Wayon's 2nd generation power trench MOSFET SGtechnology that has been especially tailored to minimize the on-state SSSSGSresistance and yet maintain superior switching performance. This PDFN3030-8Ldevice is well suited for high efficiency fast switching ap
8.6. Size:790K way-on
wmp119n10lg2.pdf
WMP119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionWMP119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. This device is well suited for high efficiency fast switching applications. Features V = 100V, I = 55A DS DR
8.7. Size:519K way-on
wmb119n10lg2.pdf
WMB119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DescriptionD DDWMB119N10LG2 uses Wayon's 2nd generation power trench MOSFET DDDD Dtechnology that has been especially tailored to minimize the on-state Gssresistance and yet maintain superior switching performance. This sssGsdevice is well suited for high efficiency fast switching applications. PDFN50
8.8. Size:506K way-on
wms119n10lg2.pdf
WMS119N10LG2 100V N-Channel Enhancement Mode Power MOSFET DDDescriptionDDWMS119N10LG2 uses Wayon's 2nd generation power trench MOSFET technology that has been especially tailored to minimize the on-state S SSresistance and yet maintain superior switching performance. This Gdevice is well suited for high efficiency fast switching applications.SOP-8LFeatures
8.9. Size:884K cn vbsemi
fqd19n10l.pdf
FQD19N10Lwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
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