All MOSFET. ZXMC4A16DN8 Datasheet

 

ZXMC4A16DN8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMC4A16DN8
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.2 A
   Qgⓘ - Total Gate Charge: 17 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SO8

 ZXMC4A16DN8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMC4A16DN8 Datasheet (PDF)

 ..1. Size:187K  diodes
 zxmc4a16dn8.pdf

ZXMC4A16DN8 ZXMC4A16DN8

ZXMC4A16DN8COMPLEMENTARY 40V ENHANCEMENT MODE MOSFETSUMMARYN-Channel = V(BR)DSS= 40V : RDS(on)= 0.05 ; ID= 5.2AP-Channel = V(BR)DSS= -40V : RDS(on)= 0.06 ; ID= -4.7ADESCRIPTIONThis new generation of trench MOSFETs from Zetexutilises a unique structure that combines the benefitsof low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage

 9.1. Size:286K  diodes
 zxmc4559dn8.pdf

ZXMC4A16DN8 ZXMC4A16DN8

ZXMC4559DN8COMPLEMENTARY 60V ENHANCEMENT MODE MOSFETSUMMARYN-Channel V(BR)DSS = 60V; RDS(ON) = 0.055 ; ID= 4.7AP-Channel V(BR)DSS = -60V; RDS(ON) = 0.105 ; ID= -3.9ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage,

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: IXTP1R4N120P

 

 
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