All MOSFET. KMB054N40DC Datasheet

 

KMB054N40DC Datasheet and Replacement


   Type Designator: KMB054N40DC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 54 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: DPAK
 

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KMB054N40DC Datasheet (PDF)

 ..1. Size:816K  kec
 kmb054n40dc.pdf pdf_icon

KMB054N40DC

SEMICONDUCTOR KMB054N40DCTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for Back-light Inverter and PowerC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70

 4.1. Size:241K  kec
 kmb054n40db.pdf pdf_icon

KMB054N40DC

SEMICONDUCTOR KMB054N40DBTECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for Back-light Inverter and PowerC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70

 4.2. Size:237K  kec
 kmb054n40da.pdf pdf_icon

KMB054N40DC

SEMICONDUCTOR KMB054N40DATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalancheA KDIM MILLIMETERSLcharacteristics. It is mainly suitable for Back-light Inverter and PowerC D_A 6.60 + 0.20_B 6.10 + 0.20Supply._C 5.34 + 0.30_D 0.70

 5.1. Size:903K  kec
 kmb054n40ia.pdf pdf_icon

KMB054N40DC

SEMICONDUCTOR KMB054N40IATECHNICAL DATA N-Ch Trench MOSFETGeneral DescriptionThis Trench MOSFET has better characteristics, such as fast switchingtime, low on resistance, low gate charge and excellent avalanchecharacteristics. It is mainly suitable for Back-light Inverter and PowerSupply.FEATURES VDSS=40V, ID=54A.Low Drain-Source ON Resistance.: RDS(ON)=8.5m(Max.) @ V

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Datasheet: KHB9D0N90NA , KHB9D0N90P1 , KHB9D5N20D , KHB9D5N20F2 , KHB9D5N20P , KQ9N50P , KMB012N30QA , KMB035N40DC , RU6888R , KMB054N40IA , KMB6D0DN35QB , KML0D4N20TV , KU024N06P , KU034N08P , KU045N10P , KU048N03D , KU054N03D .

Keywords - KMB054N40DC MOSFET datasheet

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