KMB054N40DC Datasheet. Specs and Replacement

Type Designator: KMB054N40DC  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 54 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: DPAK

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KMB054N40DC datasheet

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KMB054N40DC

SEMICONDUCTOR KMB054N40DC TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 ... See More ⇒

 4.1. Size:241K  kec
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KMB054N40DC

SEMICONDUCTOR KMB054N40DB TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 ... See More ⇒

 4.2. Size:237K  kec
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KMB054N40DC

SEMICONDUCTOR KMB054N40DA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche A K DIM MILLIMETERS L characteristics. It is mainly suitable for Back-light Inverter and Power C D _ A 6.60 + 0.20 _ B 6.10 + 0.20 Supply. _ C 5.34 + 0.30 _ D 0.70 ... See More ⇒

 5.1. Size:903K  kec
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KMB054N40DC

SEMICONDUCTOR KMB054N40IA TECHNICAL DATA N-Ch Trench MOSFET General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for Back-light Inverter and Power Supply. FEATURES VDSS=40V, ID=54A. Low Drain-Source ON Resistance. RDS(ON)=8.5m (Max.) @ V... See More ⇒

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Detailed specifications: KHB9D0N90NA, KHB9D0N90P1, KHB9D5N20D, KHB9D5N20F2, KHB9D5N20P, KQ9N50P, KMB012N30QA, KMB035N40DC, STP65NF06, KMB054N40IA, KMB6D0DN35QB, KML0D4N20TV, KU024N06P, KU034N08P, KU045N10P, KU048N03D, KU054N03D

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