AP3P050H
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP3P050H
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 17.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 15
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 29
nS
Cossⓘ -
Output Capacitance: 75
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.05
Ohm
Package:
TO252
AP3P050H
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP3P050H
Datasheet (PDF)
..1. Size:206K ape
ap3p050h.pdf 
AP3P050HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS -30VD Simple Drive Requirement RDS(ON) 50mG Fast Switching Characteristic ID -15A RoHS Compliant & Halogen-FreeSDescriptionAP3P050 series are from Advanced Power innovated design and GDSsilicon process technology to achieve the l
7.1. Size:186K ape
ap3p050m.pdf
AP3P050MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Fast Switching Characteristic RDS(ON) 50mG Simple Drive Requirement ID3 -5.6A RoHS Compliant & Halogen-FreeSDescriptionDDAP3P050 series are from Advanced Power innovated design and siliconDDprocess technology to achieve t
9.1. Size:191K ape
ap3p080n.pdf
AP3P080NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -30VD Small Package Outline RDS(ON) 80m Surface Mount Device ID -3.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3P080 series are from Advanced Power innovated designand silicon process technology to achieve the
9.2. Size:137K ape
ap3p010yt.pdf
AP3P010YTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free GSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,
9.3. Size:162K ape
ap3p010amt.pdf
AP3P010AMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A RoHS Compliant & Halogen-Free GSDDescriptionDDAP3P010A series are from Advanced Power innovated design andDsilicon process technology to achiev
9.4. Size:67K ape
ap3p010h.pdf
AP3P010HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58AG RoHS Compliant & Halogen-FreeSDescriptionGAP3P010 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes
9.5. Size:65K ape
ap3p028lm.pdf
AP3P028LMHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 28m Capable of 2.5V Gate Drive ID3 -7.7AG RoHS Compliant & Halogen-FreeSDescriptionDDAP3P028L series are from Advanced Power innovated design andDDsilicon process technology to achiev
9.6. Size:186K ape
ap3p010m.pdf
AP3P010MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID3 -13.3AG RoHS Compliant & Halogen-FreeSDescriptionDDAP3P010 series are from Advanced Power innovated design and siliconDDprocess technology to achieve t
9.7. Size:154K ape
ap3p090n.pdf
AP3P090NHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Small Package Outline RDS(ON) 90m Surface Mount Device ID3 -3.1AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP3P090 series are from Advanced Power innovated designand silicon process technology to achieve the
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