BL12N65-A MOSFET Datasheet: N-Ch, 650V, 12A. Full specification with pinout and replacement list

BL12N65-A Specs and Replacement

Type Designator: BL12N65-A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 176 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm

Package: TO-220F

BL12N65-A substitution

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BL12N65-A datasheet

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BL12N65 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒

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BL12N65A Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N65A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati... See More ⇒

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BL12N60 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL12N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application... See More ⇒

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12N60A Power MOSFET 1 Description Step-Down Converter BL12N60A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Par... See More ⇒

Detailed specifications: BL10N80-A , BL10N80-F , BL10N80-P , BL10N80-W , BL12N60-A , BL12N60A-A , BL12N60A-P , BL12N60-P , AON7506 , BL12N65A-A , BL12N65A-P , BL12N65-P , BL12N70-A , BL12N70-P , BL13N25-A , BL13N25-D , BL13N25L-A .