FDS6572A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: FDS6572A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 16 A
Tj ⓘ - Максимальная температура канала: 175 °C
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 1433 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: SO-8
Аналог (замена) для FDS6572A
FDS6572A Datasheet (PDF)
fds6572a.pdf

September 2001FDS6572A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 16 A, 20 V. RDS(ON) = 6 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 8 m @ VGS = 2.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate c
fds6574a.pdf

May 2008tmMFDS6574A20V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 16 A, 20 V. RDS(ON) = 6 m @ VGS = 4.5 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 7 m @ VGS = 2.5 Vconverters using either synchronous or conventionalRDS(ON) = 9 m @ VGS = 1.8 Vswitching PWM controllers. It has been optimi
fds6575.pdf

September 2001 FDS6575 P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P 2.5V specified MOSFET is a rugged -Channel 10 A, 20 V. R = 13 m @ V = 4.5 V DS(ON) GSgate version of Fairchild Semiconductors advanced R = 17 m @ V = 2.5 V DS(ON) GSPowerTrench process. It has been optimized for power management applications wi
fds6570a.pdf

March 2000FDS6570ASingle N-Channel 2.5V Specified PowerTrench MOSFETGeneral DescriptionFeaturesThis N-Channel 2.5V specified MOSFET is produced 15 A, 20 V. RDS(on) = 0.0075 @ VGS = 4.5 Vusing Fairchild Semiconductor's advancedPowerTrench process that has been especially tailored RDS(on) = 0.010 @ VGS = 2.5 V.to minimize on-state resistance and
Другие MOSFET... FDS5170N7 , FDS5682 , FDS5692Z , FDS6064N3 , FDS6064N7 , FDS6162N3 , FDS6162N7 , FDS6299S , 2SK3918 , FDS6609A , FDS6672A , FDS6673AZ , FDS6675A , FDS6679Z , FDS6680S , FDS6688 , FDS6688AS .
History: CHM12P10NGP | 2N4339 | SGSP341 | HGN195N15SL | CHM4201PAGP | HY2N65T | G2502
History: CHM12P10NGP | 2N4339 | SGSP341 | HGN195N15SL | CHM4201PAGP | HY2N65T | G2502



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