All Transistors. BDX69B Datasheet


BDX69B Datasheet, Equivalent, Cross Reference Search

Type Designator: BDX69B

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Collector Current |Ic max|: 25 A

Max. Operating Junction Temperature (Tj): 200 °C

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO3

BDX69B Transistor Equivalent Substitute - Cross-Reference Search


BDX69B Datasheet (PDF)

5.1. bdx69 a b c.pdf Size:213K _inchange_semiconductor


INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BDX69/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= 20A ·Low Saturation Voltage ·Complement to Type BDX68/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU

Datasheet: 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2N32 , 2N320 , 2N3200 , 2N3201 , 2N4401 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2N3208 , 2N3209 , 2N3209AQF .


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