UPA1724G MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA1724G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 170 nS
Cossⓘ - Capacitancia de salida: 610 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Encapsulados: SOP-8
Búsqueda de reemplazo de UPA1724G MOSFET
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UPA1724G datasheet
upa1724 upa1724g.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1725g.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1720 upa1720g.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1727 upa1727g.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1727 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1727 is N-Channel MOS Field Effect Transistor designed for high current switching applications. 85 1, 2, 3 ; Source 4 ; Gate FEATURES 5, 6, 7, 8 ; Drain Single chip type Low on-state resistance RDS(on)1 = 14 m TYP. (VGS = 10 V
Otros transistores... UM6K34N , UPA1716 , UPA1716G , UPA1717 , UPA1717G , UPA1720 , UPA1720G , UPA1724 , IRF1405 , UPA1725G , UPA1727 , UPA1727G , UPA1728 , UPA1728G , UPA1730 , UPA1731 , UPA1731G .
History: SSI65R360S2 | DMP2004VK | AP3P010H
History: SSI65R360S2 | DMP2004VK | AP3P010H
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