UPA1724G MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA1724G
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.5 V
Qgⓘ - Carga de la puerta: 18 nC
trⓘ - Tiempo de subida: 170 nS
Cossⓘ - Capacitancia de salida: 610 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: SOP-8
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UPA1724G Datasheet (PDF)
upa1724 upa1724g.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1725g.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1720 upa1720g.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1727 upa1727g.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1727SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA1727 is N-Channel MOS Field Effect Transistordesigned for high current switching applications.851, 2, 3 ; Source4 ; GateFEATURES5, 6, 7, 8 ; Drain Single chip type Low on-state resistanceRDS(on)1 = 14 m TYP. (VGS = 10 V
upa1728 upa1728g.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1728SWITCHINGN-CHANNEL POWER MOS FETDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA1728 is N-Channel MOS Field Effect Transistordesigned for high current switching applications.8 51, 2, 3 ; Source4 ; GateFEATURES5, 6, 7, 8 ; Drain Single chip type Low on-state resistanceRDS(on)1 = 19 m TYP. (VGS = 10
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F