All MOSFET. STE250NS10 Datasheet

 

STE250NS10 Datasheet and Replacement


   Type Designator: STE250NS10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 220 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 380 nS
   Cossⓘ - Output Capacitance: 4300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: ISOTOP
 
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STE250NS10 Datasheet (PDF)

 ..1. Size:332K  st
 ste250ns10.pdf pdf_icon

STE250NS10

STE250NS10N-channel 100 V, 0.0045 , 220 A, ISOTOPSTripFET Power MOSFETFeaturesType VDSS RDS(on) IDSTE250NS10 100 V

 7.1. Size:261K  1
 ste250n05.pdf pdf_icon

STE250NS10

 7.2. Size:330K  1
 ste250n06.pdf pdf_icon

STE250NS10

STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE VDSS RDS(on) IDSTE250N06 60 V

Datasheet: STD90N4F3 , STD95N2LH5 , STD95N3LLH6 , STD95N4F3 , STD95N4LF3 , STD9NM50N , STD9NM60N , STE140NF20D , IRF640 , STE30NK90Z , STE40NC60 , STE40NK90ZD , STE48NM50 , STE53NC50 , STE70NM50 , STE70NM60 , STF10N62K3 .

Keywords - STE250NS10 MOSFET datasheet

 STE250NS10 cross reference
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