All MOSFET. STE250NS10 Datasheet

 

STE250NS10 MOSFET. Datasheet pdf. Equivalent

Type Designator: STE250NS10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 500 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 220 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 900 nC

Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm

Package: ISOTOP

STE250NS10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STE250NS10 Datasheet (PDF)

0.1. ste250ns10.pdf Size:332K _st

STE250NS10
STE250NS10

STE250NS10 N-channel 100 V, 0.0045 Ω, 220 A, ISOTOP STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STE250NS10 100 V <0.0055 Ω 220 A ■ Standard threshold drive ■ 100% avalanche tested Description ISOTOP This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high p

Datasheet: STD90N4F3 , STD95N2LH5 , STD95N3LLH6 , STD95N4F3 , STD95N4LF3 , STD9NM50N , STD9NM60N , STE140NF20D , IRF540N , STE30NK90Z , STE40NC60 , STE40NK90ZD , STE48NM50 , STE53NC50 , STE70NM50 , STE70NM60 , STF10N62K3 .

 

 
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