STE250NS10 MOSFET. Datasheet pdf. Equivalent
Type Designator: STE250NS10
Marking Code: E250NS10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 220 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 900 nC
trⓘ - Rise Time: 380 nS
Cossⓘ - Output Capacitance: 4300 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: ISOTOP
STE250NS10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STE250NS10 Datasheet (PDF)
ste250ns10.pdf
STE250NS10N-channel 100 V, 0.0045 , 220 A, ISOTOPSTripFET Power MOSFETFeaturesType VDSS RDS(on) IDSTE250NS10 100 V
ste250n06.pdf
STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGETYPE VDSS RDS(on) IDSTE250N06 60 V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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