STE250NS10 Specs and Replacement
Type Designator: STE250NS10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 220 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 380 nS
Cossⓘ - Output Capacitance: 4300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: ISOTOP
STE250NS10 substitution
- MOSFET ⓘ Cross-Reference Search
STE250NS10 datasheet
ste250ns10.pdf
STE250NS10 N-channel 100 V, 0.0045 , 220 A, ISOTOP STripFET Power MOSFET Features Type VDSS RDS(on) ID STE250NS10 100 V ... See More ⇒
ste250n06.pdf
STE250N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE VDSS RDS(on) ID STE250N06 60 V ... See More ⇒
Detailed specifications: STD90N4F3 , STD95N2LH5 , STD95N3LLH6 , STD95N4F3 , STD95N4LF3 , STD9NM50N , STD9NM60N , STE140NF20D , IRFP460 , STE30NK90Z , STE40NC60 , STE40NK90ZD , STE48NM50 , STE53NC50 , STE70NM50 , STE70NM60 , STF10N62K3 .
Keywords - STE250NS10 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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