SFR9110TF Datasheet. Specs and Replacement

Type Designator: SFR9110TF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 20 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: DPAK

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SFR9110TF datasheet

 ..1. Size:250K  fairchild semi
 sfr9110tf.pdf pdf_icon

SFR9110TF

SFR/U9110 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -2.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Lower RDS(ON) 0.912 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M... See More ⇒

 7.1. Size:253K  fairchild semi
 sfu9110 sfr9110.pdf pdf_icon

SFR9110TF

SFR/U9110 Advanced Power MOSFET FEATURES BVDSS = -100 V n Avalanche Rugged Technology RDS(on) = 1.2 n Rugged Gate Oxide Technology n Lower Input Capacitance ID = -2.8 A n Improved Gate Charge n Extended Safe Operating Area D-PAK I-PAK n Lower Leakage Current 10 A(Max.) @ VDS = -100V n Lower RDS(ON) 0.912 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute M... See More ⇒

 7.2. Size:427K  samsung
 sfr9110.pdf pdf_icon

SFR9110TF

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 1.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = -100V Lower RDS(ON) 0.912 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara... See More ⇒

 9.1. Size:262K  fairchild semi
 sfu9130 sfr9130.pdf pdf_icon

SFR9110TF

SFR/U9130 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current 10 A (Max.) @ VDS = -100V Lower RDS(ON) 0.225 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum... See More ⇒

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Detailed specifications: SFP830, SFP830D, SFP840, SFP9640L, SFP9N50, SFR9014TF, SFR9024TM, SFR9034TF, 75N75, SFT1452, SFT210DE, SFT6661, SFW9530TM, SFW9640TM, SFW9Z34TM, SQM100N04-2M7, SQM100N04-3M5

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