All MOSFET. SIHFBC40A Datasheet

 

SIHFBC40A Datasheet and Replacement


   Type Designator: SIHFBC40A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 136 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO-220AB
 
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SIHFBC40A Datasheet (PDF)

 ..1. Size:208K  vishay
 irfbc40a sihfbc40a.pdf pdf_icon

SIHFBC40A

IRFBC40A, SiHFBC40AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 42COMPLIANTRuggednessQgs (nC) 10 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfigurati

 ..2. Size:209K  vishay
 sihfbc40a.pdf pdf_icon

SIHFBC40A

IRFBC40A, SiHFBC40AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 600Requirement AvailableRDS(on) ()VGS = 10 V 1.2 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 42COMPLIANTRuggednessQgs (nC) 10 Fully Characterized Capacitance andQgd (nC) 20Avalanche Voltage and CurrentConfigurati

 0.1. Size:361K  vishay
 irfbc40as sihfbc40as.pdf pdf_icon

SIHFBC40A

IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche

 0.2. Size:387K  vishay
 irfbc40aspbf sihfbc40as.pdf pdf_icon

SIHFBC40A

IRFBC40AS, SiHFBC40ASVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 600DefinitionRDS(on) ()VGS = 10 V 1.2 Low Gate Charge Qg results in Simple DriveRequirementQg (Max.) (nC) 42 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 10RuggednessQgd (nC) 20 Fully Characterized Capacitance and Avalanche

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Datasheet: SIHFBC20S , SIHFBC30 , SIHFBC30A , SIHFBC30AL , SIHFBC30AS , SIHFBC30L , SIHFBC30S , SIHFBC40 , 7N65 , SIHFBC40AS , SIHFBC40L , SIHFBC40LC , SIHFBC40S , SIHFBE20 , SIHFBE30 , SIHFBE30L , SIHFBE30S .

History: STH8N80FI

Keywords - SIHFBC40A MOSFET datasheet

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