RSS110N03FU6TB Datasheet and Replacement
Type Designator: RSS110N03FU6TB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 410 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0104 Ohm
Package: SOP-8
RSS110N03FU6TB Datasheet (PDF)
rss110n03fu6tb rss110n03tb.pdf

RSS110N03 Transistor Switching (30V, 11A) RSS110N03 External dimensions (Unit : mm) Features 1) Low on-resistance. SOP85.00.22) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 0.20.1 Applications (1)Source(2)SourcePower switching, DC/DC converter. (3)Source(4)Gate0.40.11.27(5)Drain0.1(6)DrainEach lead has same dim
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History: DMN60H3D5SK3
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History: DMN60H3D5SK3



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