2N543 Specs and Replacement
Type Designator: 2N543
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 0.025 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 18 MHz
Collector Capacitance (Cc): 5 pF
Forward Current Transfer Ratio (hFE), MIN: 130
Noise Figure, dB: -
Package: TO5
2N543 Substitution
2N543 datasheet
2n5432 2n5433 2n5434.pdf
2N5432/5433/5434 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 4 to 10 5 10 2.5 2N5433 3 to 9 7 10 2.5 2N5434 1 to 4 10 10 2.5 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 2N5432 ... See More ⇒
2n5430x.pdf
2N5430X Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 100V IC = 7A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS spec... See More ⇒
2n5430.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N5430 DESCRIPTION Contunuous Collector Current-IC= 7A Low Collector-Emitter Saturation Voltage- VCE(sat)= 1.2V(Max) @IC= 7A Wide Area of Safe Operation APPLICATIONS Designed for switching and wide-band amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE... See More ⇒
Detailed specifications: 2N5424 , 2N5424A , 2N5425 , 2N5426 , 2N5427 , 2N5428 , 2N5429 , 2N542A , MJE350 , 2N5430 , 2N5435 , 2N5436 , 2N5437 , 2N5438 , 2N5439 , 2N543A , 2N544 .
History: GS9013F
Keywords - 2N543 pdf specs
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History: GS9013F
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