TSM4NB60CH Todos los transistores

 

TSM4NB60CH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TSM4NB60CH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 53.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO-251
 

 Búsqueda de reemplazo de TSM4NB60CH MOSFET

   - Selección ⓘ de transistores por parámetros

 

TSM4NB60CH Datasheet (PDF)

 ..1. Size:490K  taiwansemi
 tsm4nb60ch tsm4nb60ci tsm4nb60cp tsm4nb60cz.pdf pdf_icon

TSM4NB60CH

TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: PRODUCT SUMMARY 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 600 2.5 @ VGS =10V 4 General Description The TSM4NB60 N-Channel Power MOSFET is TO-251 TO-252 (IPAK) (DPAK) produced by new advance planar process. This advanced technology has been especially tailored to minimize on-state resi

 9.1. Size:373K  taiwansemi
 tsm4nd50cp.pdf pdf_icon

TSM4NB60CH

TSM4ND50 500V N-Channel Power MOSFET TO-251 TO-252 Pin Definition: PRODUCT SUMMARY (IPAK) (DPAK) 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 500 2.7 @ VGS =10V 1.5 General Description The TSM4ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state res

 9.2. Size:166K  taiwansemi
 tsm4n80ci tsm4n80cz.pdf pdf_icon

TSM4NB60CH

TSM4N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 3 @ VGS =10V 4 General Description The TSM4N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

 9.3. Size:395K  taiwansemi
 tsm4n90ci tsm4n90cz.pdf pdf_icon

TSM4NB60CH

TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 900 4 @ VGS =10V 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide s

MOSTRAR MÁS

Otros transistores... TSM4N60CH , TSM4N60CI , TSM4N60CP , TSM4N60CZ , TSM4N80CI , TSM4N80CZ , TSM4N90CI , TSM4N90CZ , RU7088R , TSM4NB60CI , TSM4NB60CP , TSM4NB60CZ , TSM4ND50CP , TSM55N03CP , TSM5NB50CZ , TSM5ND50CH , TSM5ND50CP .

History: BUZ91A | HMS5N90K | 3LP01SS | ME60N03AS-G | JMSH0401ATL | IRF1404ZGPBF | AP2322GN-HF

 

 
Back to Top

 


 
.