MBT3904DW1T3G Todos los transistores

 

MBT3904DW1T3G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MBT3904DW1T3G
   Código: MA
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-363

 Búsqueda de reemplazo de transistor bipolar MBT3904DW1T3G

 

Principales características: MBT3904DW1T3G

 ..1. Size:100K  onsemi
mbt3904dw1t3g.pdf pdf_icon

MBT3904DW1T3G

MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de

 0.1. Size:100K  onsemi
nsvmbt3904dw1t3g.pdf pdf_icon

MBT3904DW1T3G

MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose www.onsemi.com Transistors MARKING The MBT3904DW1 and MBT3904DW2 devices are a spin-off of DIAGRAM our popular SOT-23/SOT-323 three-leaded device. It is designed for 6 general purpose amplifier applications and is housed in the SOT-363 SOT-363/SC-88/ six-leaded surface mount package. By putting two discrete de

 0.2. Size:554K  lrc
lmbt3904dw1t1g lmbt3904dw1t3g.pdf pdf_icon

MBT3904DW1T3G

LMBT3904DW1T1G S-LMBT3904DW1T1G General Purpose Transistors NPN Silicon 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC88(SOT-363) qualified and PPAP capable. Low VCE(sat), 0.4 V Simplifi

 3.1. Size:908K  onsemi
smbt3904dw1t1g mbt3904dw.pdf pdf_icon

MBT3904DW1T3G

MBT3904DW1T1G, MBT3904DW2T1G, SMBT3904DW1T1G Dual General Purpose Transistors http //onsemi.com The MBT3904DW1T1G and MBT3904DW2T1G devices are a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is MARKING designed for general purpose amplifier applications and is housed in DIAGRAM the SOT-363 six-leaded surface mount package. By putting two 6 discrete devices in one

Otros transistores... M8050-D , M8050S , M8550S , MA42 , MA92 , MAG9413 , MBT2222ADW1T1G , MBT35200MT1G , 2N5401 , MBT3906DW1T2G , MBT3946DW1T2G , MBT6517LT1 , MBTA06LT1 , RT3A66M , RT3A77M , RT3C66M , RT3C77M .

 

 
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