IPP60R199CP PDF and Equivalents Search

IPP60R199CP CoolMOS Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RONxQg R 0.199 DS(on),max Ultra low gate charge Q 32 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO220 Pb-free lead plating; RoHS compliant CoolMOS CP is specially designe... See More ⇒

isc N-Channel MOSFET Transistor IPP60R199CP IIPP60R199CP FEATURES Static drain-source on-resistance RDS(on) 0.199 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) ... See More ⇒

IPP60R199CP C IMOS # A0 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound PG TO220 7!"% # ... See More ⇒

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒

C lMO e n i t I 1 I 1 I 1 O 47 O O 1 Descripti n t b C lMO i e l ti n te n l i lt e p e MO e i ne in t t e pej n ti n ) pin iple n pi neee b In ine n e n l ie C lMO eie mbine t e expeien e t e le in MO pplie it i l inn ti n e e ltin e i e p i e ll bene it t it in MO ile n t i i in e e e xtemel l it in n n ti n l e m ke it in... See More ⇒

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 600V CoolMOS E6 Power Transistor IPx60R190E6 Data Sheet Rev. 2.0, 2010-05-03 Final Industrial & Multimarket 600V CoolMOS E6 Power Transistor IPP60R190E6, IPA60R190E6 IPW60R190E6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ)... See More ⇒

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPP60R190P6, IPA60R190P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to ... See More ⇒

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPB60R190P6, IPP60R190P6, IPA60R190P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, ... See More ⇒

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPP60R190P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPP60R190P6 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and ... See More ⇒

isc N-Channel MOSFET Transistor IPP60R190C6 IIPP60R190C6 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒

isc N-Channel MOSFET Transistor IPP60R190E6 IIPP60R190E6 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ABSOL... See More ⇒

isc N-Channel MOSFET Transistor IPP60R190P6 IIPP60R190P6 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use... See More ⇒