All MOSFET. H5N2503P Datasheet

 

H5N2503P MOSFET. Datasheet pdf. Equivalent

Type Designator: H5N2503P

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 50 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO3P

H5N2503P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

H5N2503P Datasheet (PDF)

1.1. rej03g1105 h5n2503pds.pdf Size:101K _renesas

H5N2503P
H5N2503P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.1. rej03g1108 h5n2508dldsds.pdf Size:104K _renesas

H5N2503P
H5N2503P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.2. r07ds0399ej h5n2504dl.pdf Size:108K _renesas

H5N2503P
H5N2503P

Preliminary Datasheet H5N2504DL, H5N2504DS R07DS0399EJ0300 (Previous: REJ03G1106-0200) Silicon N Channel MOS FET Rev.3.00 High Speed Power Switching May 16, 2011 Features Low on-resistance Low leakage current High speed switching Low gate charge Avalanche ratings Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L

 4.3. rej03g1109 h5n2509pds.pdf Size:100K _renesas

H5N2503P
H5N2503P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

4.4. rej03g1107 h5n2505dldsds.pdf Size:132K _renesas

H5N2503P
H5N2503P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

 4.5. h5n2507p.pdf Size:128K _renesas

H5N2503P
H5N2503P

 Preliminary Datasheet H5N2507P R07DS0877EJ0200 (Previous: RJJ03G0646-0100) 250V - 50A - MOS FET Rev.2.00 High Speed Power Switching Sep 12, 2012 Features  Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)  Low leakage current  High speed switching  Low gate charge  Built-in fast recovery diode Outline RENESAS Package code:

Datasheet: FSYA250R , GFB50N03 , GFB70N03 , GFD30N03 , GFP50N03 , GFP70N03 , H5N2001LD , H5N2001LS , J113 , H5N5004PL , H5N5005PL , H7N0302LS , HAF1001 , HAF1002 , HAF1003 , HAF1004 , HAF1005 .

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