2SJ212 Datasheet. Specs and Replacement

Type Designator: 2SJ212  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 380 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SC62

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2SJ212 datasheet

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2SJ212

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2SJ212

SMD Type MOSFET P-Channel MOSFET 2SJ212 1.70 0.1 Features VDS (V) =-60V ID =-500m A 0.42 0.1 0.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 20 Continuous Drain Current ID -0.5 A Pul... See More ⇒

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2SJ212

2SJ218 Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline 2SJ218 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 60 V ... See More ⇒

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2SJ212

2SJ216 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device _ Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3PFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SJ216 Absolut... See More ⇒

Detailed specifications: 2SJ204, 2SJ205, 2SJ206, 2SJ207, 2SJ208, 2SJ209, 2SJ210, 2SJ211, SPP20N60C3, 2SJ218, 2SJ243, 2SJ302, 2SJ303, 2SJ324, 2SJ325, 2SJ326, 2SJ327

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