SRT12N058HS2 PDF and Equivalents Search

 

SRT12N058HS2 Specs and Replacement


   Type Designator: SRT12N058HS2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 133 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 104 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
   Package: TO263
 

 SRT12N058HS2 substitution

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SRT12N058HS2 datasheet

 4.1. Size:1670K  sanrise-tech
 srt12n058h.pdf pdf_icon

SRT12N058HS2

Datasheet 5.8m , 120V, N-Channel Power MOSFET SRT12N058H General Description Symbol The Sanrise SRT12N058H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior... See More ⇒

Detailed specifications: SRT10N230HD , SRT10N230HM , SRT10N230HD56 , SRT10N230LD56 , SRT10N230LM , SRT10N230LD , SRT12N058HD56 , SRT12N058HTC , IRF3205 , SRT15N050HTC , SRT15N050HS2 , SRT15N050HT , SRT15N050HTL , SRT15N059HTC , SRT15N059HS2 , SRT15N059HT , SRT15N059HTL .

Keywords - SRT12N058HS2 MOSFET specs

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