SRT12N058HS2 Datasheet. Specs and Replacement

Type Designator: SRT12N058HS2  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 133 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 104 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: TO263

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SRT12N058HS2 substitution

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SRT12N058HS2 datasheet

 4.1. Size:1670K  sanrise-tech
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SRT12N058HS2

Datasheet 5.8m , 120V, N-Channel Power MOSFET SRT12N058H General Description Symbol The Sanrise SRT12N058H is a low voltage power Drain 5,6,7,8 MOSFET, fabricated using advanced split gate trench technology. The resulting device has Gate 4 extremely low on resistance, low gate charge and fast switching time, making it especially suitable for applications which require superior... See More ⇒

Detailed specifications: SRT10N230HD, SRT10N230HM, SRT10N230HD56, SRT10N230LD56, SRT10N230LM, SRT10N230LD, SRT12N058HD56, SRT12N058HTC, IRFZ44N, SRT15N050HTC, SRT15N050HS2, SRT15N050HT, SRT15N050HTL, SRT15N059HTC, SRT15N059HS2, SRT15N059HT, SRT15N059HTL

Keywords - SRT12N058HS2 MOSFET specs

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