5N60A - описание и поиск аналогов

RoHS 5N60 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (5A, 600Volts) DESCRIPTION D The Nell 5N60 is a three-terminal silicon D device with current conduction capability of 5A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. G They are designed for use in applications such

Features

Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff

N N-CHANNEL MOSFET FHP15N60A /FHF15N60A MAIN CHARACTERISTICS FEATURES ID 15A Low gate charge VDSS 600V Crss ( 16pF) Low Crss (typical 16pF ) Rdson-typ @Vgs=10V 0.41 Fast switching Qg-typ 50nC 100% 100% avalanche tested dv/dt Improved dv

IQIB75N60A3 PRELIMINARY DATASHEET IGBT in Trench & Field Stop-technology in Isolated SOT227 Package Very high switching speed 1 Very low VCE(sat Short circuit withstand time 5 us Designed for frequency converters and UPS Very tight parameter distribution 3 High ruggedness, temperature stability - Parallel switching capability 2, 4 Pb-free lead finish

IQAB75N60A1 PRELIMINARY DATASHEET IGBT Trench & Field Stop technology in TO247 Package Very high switching speed Very low V CE(sat) Short circuit withstand time - 5 s Designed for frequency converters and UPS Very tight parameter distribution High ruggedness, temperature stability Parallel switching capability Pb-free lead finish; RoHS comp

Pb Free Product http //www.ncepower.com NCEP035N60AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60AG uses Super Trench II technology that is V =60V,I =90A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m (typical) @

http //www.ncepower.com NCEP025N60AG NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP025N60AG uses Super Trench II technology that is V =60V,I =165A DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.5m (typical) @ V =4.5V DS(ON)

http //www.ncepower.com NCEP035N60AK NCE N-Channel Super Trench II Power MOSFET Description General Features The NCEP035N60AK uses Super Trench II technology that is V =60V,I =130A DS D uniquely optimized to provide the most efficient high frequency R =2.8m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =3.5m (typical) @ V =4.5V DS(ON)

http //www.ncepower.com NCEAP025N60AG NCE Automotive N-Channel Super Trench II Power MOSFET Description General Features The NCEAP025N60AG uses Super Trench II technology that is V =60V,I =185A (Silicon Limited) DS D uniquely optimized to provide the most efficient high frequency R =2.0m (typical) @ V =10V DS(ON) GS switching performance. Both conduction and switching power R =2.5m

TMP5N60AZ(G)/TMPF5N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A

TMD5N60AZ(G)/TMU5N60AZ(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS5N60 A8H General Description VDSS 600 V CS5N60 A8H, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor ca

Silicon N-Channel Power MOSFET R CS5N60 A4H General Description VDSS 600 V CS5N60 A4H, the silicon N-channel Enhanced ID 5 A PD(TC=25 ) 85 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon FS Planar IGBT R BT15N60A9F General Description VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features FS Planar Technology, Positive temperature coeff

HMS15N60A N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction 650 V VDS@Tjmax technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 0 m gate charge. This super junction MOSFET fits the industry s ID 1 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appl

isc N-Channel MOSFET Transistor MCU05N60A FEATURES Drain Current I = 4.5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 2.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.