NCE70N290I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE70N290I
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 124 W
Предельно допустимое напряжение сток-исток |Uds|: 700 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 13 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 16.5 nC
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 35 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.295 Ohm
Тип корпуса: TO-251
Аналог (замена) для NCE70N290I
NCE70N290I Datasheet (PDF)
nce70n290i.pdf
NCE70N290IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu
nce70n290.pdf
NCE70N290N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indus
nce70n290d.pdf
NCE70N290DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu
nce70n290f.pdf
NCE70N290FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu
nce70n290t.pdf
NCE70N290TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu
nce70n290k.pdf
NCE70N290KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: P0460EI