Справочник MOSFET. NCE70N290I

 

NCE70N290I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE70N290I
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 124 W
   Предельно допустимое напряжение сток-исток |Uds|: 700 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 13 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 16.5 nC
   Время нарастания (tr): 8 ns
   Выходная емкость (Cd): 35 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.295 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для NCE70N290I

 

 

NCE70N290I Datasheet (PDF)

 ..1. Size:804K  ncepower
nce70n290i.pdf

NCE70N290I
NCE70N290I

NCE70N290IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu

 5.1. Size:814K  ncepower
nce70n290.pdf

NCE70N290I
NCE70N290I

NCE70N290N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indus

 5.2. Size:800K  ncepower
nce70n290d.pdf

NCE70N290I
NCE70N290I

NCE70N290DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu

 5.3. Size:783K  ncepower
nce70n290f.pdf

NCE70N290I
NCE70N290I

NCE70N290FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu

 5.4. Size:938K  ncepower
nce70n290t.pdf

NCE70N290I
NCE70N290I

NCE70N290TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu

 5.5. Size:806K  ncepower
nce70n290k.pdf

NCE70N290I
NCE70N290I

NCE70N290KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu

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History: P0460EI

 

 
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