Биполярный транзистор BFU530W
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: BFU530W
Маркировка: ZB*
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.45
W
Макcимально допустимое напряжение коллектор-база (Ucb): 24
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 2
V
Макcимальный постоянный ток коллектора (Ic): 0.01
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 11000
MHz
Ёмкость коллекторного перехода (Cc): 0.68
pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора:
SOT323
Аналоги (замена) для BFU530W
BFU530W
Datasheet (PDF)
..1. Size:296K nxp
bfu530w.pdf 
BFU530WNPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.The BFU530W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
8.1. Size:325K philips
bfu530x.pdf 
BFU530XNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU530X is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and be
8.2. Size:335K philips
bfu530xr.pdf 
BFU530XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
8.3. Size:328K philips
bfu530.pdf 
BFU530NPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package.The BFU530 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and bene
8.4. Size:310K nxp
bfu530xr.pdf 
BFU530XRNPN wideband silicon RF transistorRev. 1 5 March 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143R package.The BFU530XR is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and
8.5. Size:297K nxp
bfu530a.pdf 
BFU530ANPN wideband silicon RF transistorRev. 1 13 January 2014 Product data sheet1. Product profile1.1 General descriptionNPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT23 package.The BFU530A is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.1.2 Features and benefits
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