NP22N055IHE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NP22N055IHE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 110 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
Paquete / Cubierta: TO-252
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NP22N055IHE Datasheet (PDF)
np22n055hhe np22n055ihe np22n055she.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
np22n055hle np22n055ile np22n055sle.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... NP180N055TUJ , NP180N055TUK , NP20N10YDF , NP20P04SLG , NP20P06SLG , NP20P06YLG , NP22N055HHE , NP22N055HLE , STP80NF70 , NP22N055ILE , NP22N055SHE , NP22N055SLE , NP23N06YDG , NP28N10SDE , NP30N04QUK , NP32N055HDE , NP32N055HHE .
History: 4N65D | CSD18509Q5B | HY3312PS | HFP12N60S | SVS11N65T | 2SK3575-Z | 15NM70G-TM3-T
History: 4N65D | CSD18509Q5B | HY3312PS | HFP12N60S | SVS11N65T | 2SK3575-Z | 15NM70G-TM3-T



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