All MOSFET. SPA11N80C3 Datasheet

 

SPA11N80C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPA11N80C3
   Marking Code: 11N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 41 W
   Maximum Drain-Source Voltage |Vds|: 800 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
   Maximum Drain Current |Id|: 11 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 64 nC
   Rise Time (tr): 15 nS
   Drain-Source Capacitance (Cd): 65 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm
   Package: TO220FP

 SPA11N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPA11N80C3 Datasheet (PDF)

 ..1. Size:408K  infineon
spa11n80c3.pdf

SPA11N80C3
SPA11N80C3

SPA11N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.45DS(on)max Extreme dv/dt ratedQ 64 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capac

 ..2. Size:202K  inchange semiconductor
spa11n80c3.pdf

SPA11N80C3
SPA11N80C3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA11N80C3FEATURESNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 8.1. Size:678K  infineon
spp11n60c3 spi11n60c3 spa11n60c3 spa11n60c3e8185.pdf

SPA11N80C3
SPA11N80C3

SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2

 8.2. Size:654K  infineon
spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf

SPA11N80C3
SPA11N80C3

SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2

 8.3. Size:569K  infineon
spp11n65c3 spa11n65c3 spi11n65c3 spp11n65c3 spa11n65c3 spi11n65c3 rev.2.91.pdf

SPA11N80C3
SPA11N80C3

SPP11N65C3,SPA11N65C3SPI11N65C3Cool MOS Power TransistorV 650 VDSFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO262 PG-TO220FP PG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductanceType Package Ordering Code MarkingSPP11N65C3 PG-TO220 Q67

 8.4. Size:555K  infineon
spa11n60cfd.pdf

SPA11N80C3
SPA11N80C3

SPA11N60CFDCoolMOSTM Power TransistorProduct SummaryFeaturesV 600 VDS New revolutionary high voltage technologyR 0.44 DS(on),max Intrinsic fast-recovery body diode1)11 AID Extremely low reverse recovery charge Ultra low gate chargePG-TO220-3-31 Extreme dv /dt rated High peak current capability Periodic avalanche rated Qualified for

 8.5. Size:201K  inchange semiconductor
spa11n60c3.pdf

SPA11N80C3
SPA11N80C3

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPA11N60C3FEATURESNew revolutionary high voltage technologyUltra low gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

 8.6. Size:246K  inchange semiconductor
spa11n60c3e8185.pdf

SPA11N80C3
SPA11N80C3

isc N-Channel MOSFET Transistor SPA11N60C3E8185SPA11N60C3E8185FEATURESStatic drain-source on-resistance:RDS(on) 0.38Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceA

 8.7. Size:200K  inchange semiconductor
spa11n60cfd.pdf

SPA11N80C3
SPA11N80C3

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA11N60CFDFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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