All MOSFET. SPA11N80C3 Datasheet

 

SPA11N80C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPA11N80C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 41 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Drain Current |Id|: 11 A

Maximum Drain-Source On-State Resistance (Rds): 0.45 Ohm

Package: TO220FP

SPA11N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPA11N80C3 Datasheet (PDF)

1.1. spa11n80c3 rev2.91 a.pdf Size:408K _infineon

SPA11N80C3
SPA11N80C3

SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS • New revolutionary high voltage technology R @ Tj = 25°C 0.45 ? DS(on)max • Extreme dv/dt rated Q 64 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective capacitances • Fully iso

4.1. spa11n60cfd rev1.4.pdf Size:555K _infineon

SPA11N80C3
SPA11N80C3

SPA11N60CFD CoolMOSTM Power Transistor Product Summary Features V 600 V DS • New revolutionary high voltage technology R 0.44 DS(on),max • Intrinsic fast-recovery body diode 1) 11 A I D • Extremely low reverse recovery charge • Ultra low gate charge PG-TO220-3-31 • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified for industrial grade a

4.2. spp11n65c3 spa11n65c3 spi11n65c3 rev.2.91.pdf Size:569K _infineon

SPA11N80C3
SPA11N80C3

SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS™ Power Transistor V 650 V DS Feature RDS(on) 0.38 ? • New revolutionary high voltage technology ID 11 A • Ultra low gate charge PG-TO262 PG-TO220FP PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance Type Package Ordering Code Marking SPP11N65C3 PG-TO220 Q67040-S4557 11N65C3

4.3. spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf Size:654K _infineon

SPA11N80C3
SPA11N80C3

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 ? • New revolutionary high voltage technology ID 11 A • Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 • Periodic avalanche rated • Extreme dv/dt rated 3 • High peak current capability 2 1 P-TO220-3-31 • Improved transconductance • PG-TO-220-3-31;-3-111: Fully

Datasheet: SPA07N60C3 , SPA07N60CFD , SPA07N65C3 , SPA08N50C3 , SPA08N80C3 , SPA11N60C3 , SPA11N60CFD , SPA11N65C3 , J111 , SPA12N50C3 , SPA15N60C3 , SPA15N60CFD , SPA15N65C3 , SPA16N50C3 , SPA17N80C3 , SPA20N60C3 , SPA20N60CFD .

 


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