All MOSFET. RJK0390DPA Datasheet

 

RJK0390DPA Datasheet and Replacement


   Type Designator: RJK0390DPA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.8 nS
   Cossⓘ - Output Capacitance: 1120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: WPAK
 

 RJK0390DPA substitution

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RJK0390DPA Datasheet (PDF)

 0.1. Size:118K  renesas
 rej03g1823 rjk0390dpads.pdf pdf_icon

RJK0390DPA

Preliminary Datasheet RJK0390DPA REJ03G1823-0130Silicon N Channel Power MOS FET Rev.1.30Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 1.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

 8.1. Size:92K  renesas
 rej03g1786 rjk0395dpads.pdf pdf_icon

RJK0390DPA

Preliminary Datasheet RJK0395DPA REJ03G1786-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

 8.2. Size:92K  renesas
 rej03g1787 rjk0396dpads.pdf pdf_icon

RJK0390DPA

Preliminary Datasheet RJK0396DPA REJ03G1787-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.9 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

 8.3. Size:95K  renesas
 rej03g1824 rjk0391dpads.pdf pdf_icon

RJK0390DPA

Preliminary Datasheet RJK0391DPA REJ03G1824-0210Silicon N Channel Power MOS FET Rev.2.10Power Switching May 12, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.2 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

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Datasheet: RJK0364DPA , RJK0365DPA , RJK0366DPA , RJK0368DPA , RJK0379DPA , RJK0380DPA , RJK0381DPA , RJK0389DPA , TK10A60D , RJK0391DPA , RJK0392DPA , RJK0393DPA , RJK0394DPA , RJK0395DPA , RJK0396DPA , RJK0397DPA , RJK03A4DPA .

Keywords - RJK0390DPA MOSFET datasheet

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