IRFM044 MOSFET. Datasheet pdf. Equivalent
Type Designator: IRFM044
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 125 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 150 °C
Drain-Source Capacitance (Cd): 2400 pF
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: TO254
IRFM044 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IRFM044 PDF doc:
1.1. irfm044.pdf 
Size:189K _international_rectifier
PD - 90708B IRFM044 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM044 0.04 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA
5.1. irfm054.pdf Size:190K _international_rectifier
PD - 90709B IRFM054 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM054 0.027 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA
5.2. irfm064.pdf Size:187K _international_rectifier
PD - 90875A IRFM064 POWER MOSFET 60V, N-CHANNEL ® THRU-HOLE (TO-254AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFM064 0.017 ? 35A* HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistance combined with high transconductance. HEXFET TO-254AA
5.3. irfm014a.pdf Size:939K _samsung
Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology ? RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µ A (Max.) @ VDS = 60V 2 ? Lower RDS(ON) : 0.097 (Typ.) 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni
Datasheet: IRFL110 , IRFL210 , IRFL214 , IRFL4105 , IRFL4310 , IRFL9014 , IRFL9110 , IRFM014A , 2SK3569 , IRFM054 , IRFM110A , IRFM120A , IRFM140 , IRFM150 , IRFM210A , IRFM214A , IRFM220A .
