BUK555-200B PDF and Equivalents Search

 

BUK555-200B PDF Specs and Replacement


   Type Designator: BUK555-200B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO-220AB
 

 BUK555-200B substitution

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BUK555-200B PDF Specs

 ..1. Size:86K  philips
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BUK555-200B

Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain ... See More ⇒

 4.1. Size:55K  philips
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BUK555-200B

Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain ... See More ⇒

 7.1. Size:55K  philips
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BUK555-200B

Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain curre... See More ⇒

 7.2. Size:69K  philips
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BUK555-200B

Philips Semiconductors Product specification PowerMOS transistor BUK555-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 41 A Automotive applications, Switched Ptot Tota... See More ⇒

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Detailed specifications: BUK455-200B , BUK456-100B , BUK472-100A , BUK472-100B , BUK543-100B , BUK553-100B , BUK553-60A , BUK553-60B , 8N60 , BUK6207-30C , BUK6208-40C , BUK6240-75C , BUK652R7-30C , BUK6C2R1-55C , BUK6C3R3-75C , BUK7213-40A , BUK7505-30A .

Keywords - BUK555-200B MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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