BUK555-200B Datasheet. Specs and Replacement

Type Designator: BUK555-200B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO-220AB

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BUK555-200B substitution

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BUK555-200B datasheet

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BUK555-200B

Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain ... See More ⇒

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 buk555-200a-b 1.pdf pdf_icon

BUK555-200B

Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -200A -200B The device is intended for use in VDS Drain-source voltage 200 200 V Switched Mode Power Supplies ID Drain ... See More ⇒

 7.1. Size:55K  philips
 buk555-60a-b 1.pdf pdf_icon

BUK555-200B

Philips Semiconductors Product Specification PowerMOS transistor BUK555-60A/B Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT logic level field-effect power transistor in a plastic envelope. BUK555 -60A -60B The device is intended for use in VDS Drain-source voltage 60 60 V Switched Mode Power Supplies ID Drain curre... See More ⇒

 7.2. Size:69K  philips
 buk555-60h 1.pdf pdf_icon

BUK555-200B

Philips Semiconductors Product specification PowerMOS transistor BUK555-60H Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope. VDS Drain-source voltage 60 V The device is intended for use in ID Drain current (DC) 41 A Automotive applications, Switched Ptot Tota... See More ⇒

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Detailed specifications: BUK455-200B, BUK456-100B, BUK472-100A, BUK472-100B, BUK543-100B, BUK553-100B, BUK553-60A, BUK553-60B, SKD502T, BUK6207-30C, BUK6208-40C, BUK6240-75C, BUK652R7-30C, BUK6C2R1-55C, BUK6C3R3-75C, BUK7213-40A, BUK7505-30A

Keywords - BUK555-200B MOSFET specs

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